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Through Hole IMZ120R090M1H N-Channel Discrete Semiconductor Transistors

ShenZhen Mingjiada Electronics Co.,Ltd.

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Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

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Through Hole IMZ120R090M1H N-Channel Discrete Semiconductor Transistors

Country/Region china
City & Province shenzhen
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Product Details

Through Hole IMZ120R090M1H N-Channel Discrete Semiconductor Transistors

 

Product Description Of IMZ120R090M1H

IMZ120R090M1H is N-Channel 1200V 26A CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Transistors.

 

Specification Of IMZ120R090M1H

Part Number

IMZ120R090M1H

Product Status

Active

FET Type

N-Channel

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

1200 V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)


Features Of IMZ120R090M1H

  • Efficiency improvement

  • Enabling higher frequency

  • Increased power density

 

Other Supply Product Types

Part Number

Package

FS32R274KSK2MMM

LFBGA257

CY8C4247AZS-M483

TQFP-44

CY8C4247LWS-M484T

QFN-56

CY8C4245AZS-M443

TQFP-44

CY8C4247AZS-M485

64-TQFP

CY8C4246AZS-M445

TQFP-44

 

FAQ

Q: Are your products original?
A: Yes, all products are original, new original import is our purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample free?
A: Yes,we support sample order and small order.Sample cost is different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also use your suggested forwarder.Products will be in good packing and ensure the safety and we are responsible to product damage to your order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without stock,we will confirm lead time for you based on your order quantity.

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