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[China]
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Address: No. 26, Dongqing Street, High-tech Zone, Zhengzhou ,Henan, China
Contact name:Daniel
HENAN ZG INDUSTRIAL PRODUCTS CO.,LTD |
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Thermal Oxide Wafer, higher uniformity, and higher dielectric strength , excellent dielectric layer as an insulator
Thermal oxide or silicon dioxide layer is formed on bare silicon surface at elevated temperature in the presence of an oxidant , the process is called thermal oxidation. Thermal oxide is normally grown in a horizontal tube furnace , at temperature range from 900°C ~ 1200°C , using either a "Wet" or "Dry" growth method . Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator . In most silicon- based devices, thermal oxide layer play an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics . we provides thermal oxide wafer in diameter from 2" to 12 " , we always choose prime grade and defect free silicon wafer as substrate for growing high uniformity thermal oxide layer to meet your specific requirements . Contact us for further information on price & delivery time .
Thermal Oxide Capability
Typically after thermal oxidation process , both front side and
back side of silicon wafer have oxide layer . In case only one side
oxide layer is required , we can remove back oxide and offer one
side thermal oxide wafer for you .
| Oxide thickness range | Oxidation technique | Within wafer uniformity | Wafer to wafer uniformity | Surface processed |
|---|---|---|---|---|
| 100 Å ~ 500Å | dry oxide | +/- 5% | +/- 10% | both sides |
| 600 Å ~ 1000Å | dry oxide | +/- 5% | +/- 10% | both sides |
| 100 nm ~ 300 nm | wet oxide | +/- 5% | +/- 10% | both sides |
| 400 nm ~ 1000 nm | wet oxide | +/- 3% | +/- 5% | both sides |
| 1 um ~ 2 um | wet oxide | +/- 3% | +/- 5% | both sides |
| 3 um ~ 4 um | wet oxide | +/- 3% | +/- 5% | both sides |
| 5 um ~ 6 um | wet oxide | +/- 3% | +/- 5% | both sides |
Thermal Oxide Wafer Application
| 100 A | Tunneling Gates |
| 150 A ~ 500 A | Gate Oxides |
| 200 A ~ 500 A | LOCOS Pad Oxide |
| 2000 A ~ 5000 A | Masking Oxides |
| 3000 A ~ 10000 A | Field Oxides |
Product Specification
| Qxidation technique | Wet oxidation or Dry oxidation |
|---|---|
| Diameter | Ø 2" / Ø 3" / Ø 4" / Ø 6" / Ø 8" / Ø 12" |
| Oxide thickness | 100 A ~ 6 um |
| Tolerance | +/- 5% |
| Surface | Single side or double sides oxide layer |
| Furnace | Horizontal tube furnace |
| Gase | Hydrogen and Oxygen gases |
| Temperature | 900 C ° - 1200 C ° |
| Refractive index | 1.456 |
