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Results forinas wafer crystal substratesfrom 1721 Products.
5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Because GaN transistors are able to ...
Shanghai, china
Verified
2 Inch Single Side Polished Sapphire Wafer Sapphire Substrate With Flat Sapphire (Sapphire, also known as white sapphire, molecular formula Al2O3) single crystal is an excellent ...
Chongqing, china
Verified
C-plane 0001 Sapphire Wafer Al2O3 Substrate for Infrared Window LED and Blue Laser Al2O3 single crystal (Sapphire, also known as white stones, sapphire) has good thermal properties...
Shanghai, china
Verified
8inch/6inch/5inch/ 2inch /3inch 4inch /5inch C-axis/ a-axis/ r-axis/ m-axis 6"/6inch dia150mm C-plane Sapphire SSP/DSP wafers with 650um/1000um Thicknessdiameter300mm 12inch Al2O3 ...
Shanghai, china
Verified
3inch diameter single crystal substrate GGG Wafer Gadolinium Gallium Garnet (GGG, Gd3Ga5O12) is a synthetic crystalline material of the garnet group, with good mechanical, thermal, ...
china
Verified
6inch VGF Growth Method P Type GaAs Wafers GaAs Substrates -------------------------------------------------------------------------------------------------------------------------...
Shanghai, china
Verified
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview A generative adversarial ...
Shanghai, china
Verified
Sapphire Al2O3 Crystal Substrate Ultrathin 2'' 3'' 4'' Double Side Polished For Optical Use​ Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, ...
Shanghai, china
Verified
Polarized LT Wafer Litao3 Substrate Application For SAW Devices Lithium Tantalate (LT, LiTaO3) has unique properties, which as a material finds uses in Electro-Optical and Acousto...
china
Verified
ultrathin sapphire glass wafer ,2inch C-axis sapphire wafer for epi-ready,sapphire thick glass lens for covering,sapphire optical windows,2inch 0.1mm thickness sapphire wafer, ...
Shanghai, china
Verified
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
Shanghai, china
Verified
Substituted GGG (SGGG) EPI 1sp Single Crystal Substrates SGGG single crystal, (substituted gadolinium gallium garnet) is grown by Czochralski method . SGGG crystals with calcium, ...
china
Verified
10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectr...
Shanghai, china
Verified
5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanicall...
Shanghai, china
Verified
10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview The features are high crystalline, good uniformity, ...
Shanghai, china
Verified
2inch GaAs (100) Undoped Substrates Overview Gallium arsenide of a GaAs Wafer has the attribute of generating laser light from electricity in a direct manner. There are two types ...
Shanghai, china
Verified
5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device Overview Since the 1990s, it has been used commonly in light ...
Shanghai, china
Verified
10x10mm2 (-201) Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Resistance<9E18Ω/cm-3 Optoelectron...
Shanghai, china
Verified
10x10mm2 100(off 6°) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤5nm Optoelectronic devices, ...
Shanghai, china
Verified
10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectron...
Shanghai, china
Verified
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