PSHI 512F17A-F

Symbol

Term

Values

Unit

V_{S MAX.}

Max. supply voltage primary

+16

V

I_{S MAX.}

Max. supply current primary

350

mA

P_DC/DC

Total power of DC/DC isolation power output

5

W

I_O

Max. logic signal output current

10

mA

I_outAV

Output average current per channel

140

mA

I_outPEAK

Output peak current per channel

±40

A

V_CES

IGBT collector-emitter voltage

1700

V

V_{isol IO}

Isolation voltage IN-OUT(1 minute. AC)

6

kV

R_{Gon/off min}

Minimal R_gon/R_goff

0.65

Ω

Q_out/pulse

Minimal charge per pulse

±50

μC

dv/dt

Rate of rise and fall of voltage

75

kV/μs

f_{SW max}

Max. working frequency

10

kHz

T_op

Operating temperature

-45...+85

℃

T_stg.

Storage temperature

-45...+85

℃

Symbol

Term

Parameter

Unit

Min.

Typ.

Max.

Rec.

V_S

Supply voltage primary

14.5

15

15.5

15

V

I_S

No-load current primary f_SW=0

f_SW=8kHz

110

125

mA

V_G(on)

Turn-on gate voltage

+15

V

V_G(off)

Turn-off gate voltage

-10

V

V_G(onTH)

IGBT turn-on threshold voltage

+13.5

V

V_G(offTH)

IGBT turn-off threshold voltage

-4.5

V

t_d(on)IO

IN-OUT turn-on delay time

500

ns

t_d(off)IO

IN-OUT turn-off delay time

500

ns

t_d(err)

Error signal return delay time

V_CEerror happen-error signal output

30

ns

t_md

Narrow pulse restrained

400

ns

t_pReset

error automatic reset time

30

μs

t_p(err)

Error signal pulse width

30

μs

V_CEstat

Reference voltage for V_CEmonitoring

3

7

8

7

V

C_PS

Primary to secondary capacitance

8

pf