Active Member
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[China]
Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Contact name:段
Shenzhen Hongxinwei Technology Co., Ltd |
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1.Features
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
2.Description
These N-channel Power MOSFETs are developed using
STMicroelectronics'revolutionary MDmesh technology, which
associates the multiple drain process withthe company's PowerMESH
horizontal layout. These devices offer extremely low on-resistance,
high dv/dt and excellent avalanche characteristics. Utilizing
ST'sproprietary strip technique, these Power MOSFETs boast an
overall dynamicperformance which is superior to similar products on
the market
3.Applications
Switching applications
