NCS21872DR2G onsemi

Here is a potential introduction for the ON Semiconductor NCS21872DR2G N-channel MOSFET:

NCS21872DR2G

The NCS21872DR2G is a compact N-channel MOSFET from ON Semiconductor providing up to 1.8A of efficient switching capability. Available in a small 2x3mm DFN package, it enables dense power control even in boards with stringent space limitations.

Key Features:

• 30V maximum drain-source voltage rating
• 1.8A continuous drain current capability
• Industry-leading 1.8mΩ typical RDS(on)
• 2x3mm DFN package with exposed thermal pad
• -40°C to 150°C operating temperature range

Allows medium current switching with minimal conduction losses.

Extremely low resistance maximizes efficiency within tight footprints.

Exposed pad effectively dissipates heat from 1.8A loads.

Rugged rating supports diverse industrial and automotive applications.

Compact DFN package simplifies high density power component layouts.

Well-suited for space-critical switching where area is constrained.

Ideal solution for various low voltage control circuits on density-optimised boards.

Enables reliable control of medium loads even within the most stringent size budgets.