NCS4325DR2G onsemi

Here is a potential introduction for the ON Semiconductor NCS4325DR2G Dual 3.5A N-Channel MOSFET:

NCS4325DR2G

The NCS4325DR2G is a high-current dual N-channel MOSFET solution from ON Semiconductor. Featuring two independent channels capable of switching up to 3.5A each in a compact DFN-8 package, it maximizes board density for applications with stringent switching needs.

Key Features:

• 20V maximum drain-source voltage rating per channel
• 3.5A continuous drain current per channel
• 1.3mΩ typical RDS(on) per channel
• Integrated current balancing and thermal protection
• -40°C to 150°C operating temperature range
• Space-saving 2.5x3mm DFN-8 package

Provides high current and density optimized dual switching solution.

Independent channels improve efficiency and enable flexible configurations.

On-chip safeguards simplify design without needing discrete components.

Wide thermal rating supports demanding industrial environments.

Ideal for tightly integrated designs requiring dual 3.5A localized switching.

Simplifies partitioning high current switching needs within a small footprint.

Enables efficient distribution of substantial dual load switching requirements.

Density optimized solution for applications with multi-channel loading needs.