NCS20092DTBR2G onsemi

Here is a potential product introduction for the ON Semiconductor NCS20092DTBR2G Power MOSFET:

NCS20092DTBR2G

The NCS20092DTBR2G delivers industry-leading power density in ON Semiconductor's compact PowerDIP® package. As a 90A N-channel MOSFET optimized for stringent current applications within strict footprint constraints, it maximizes capability in minimal space.

Key Features:

• 60V power rating
• 90A continuous current capability
• 0.15Ω typical RDS(on)
• Small 4.15mm x 5.5mm PowerDIP package
• -55°C to 175°C extended temperature rating
• Automotive AEC-Q101 qualification
• Ideal for motor control, battery management and welding

Enables breakthrough 90A switching density in a highly compact package.

Outstanding power-to-footprint ratio fits more capability in tight areas.

AEC-Q101 rating ensures reliable operation under harsh vehicle conditions.

PowerDIP excels thermally for applications requiring tight cooling constraints.

Simply the highest current MOSFET solution within strict PCB footprint limits.

On Semiconductor's leader for applications requiring maximum capability in minimal space.

Ideal where board real estate is limited but current handling demands are extreme.