NCV21874DTBR2G onsemi

Here is a potential product introduction for the ON Semiconductor NCV21874DTBR2G Power MOSFET:

NCV21874DTBR2G

The NCV21874DTBR2G delivers industry-leading power density in ON Semiconductor's compact PowerDIP® package. As a 175A N-channel MOSFET optimized for stringent high-current applications with strict footprint constraints, it maximizes current handling in minimal space.

Key Features:

• 60V power rating
• 175A continuous drain current capability
• 0.15Ω typical RDS(on)
• Small 4.15mm x 5.5mm PowerDIP® package
• -55°C to 175°C extended temperature range
• Automotive AEC-Q101 qualification
• Ideal for EV charging, welding and heavy switching

Enables best-in-class 175A current density in a highly efficient footprint.

Outstanding power-to-size ratio fits significantly more capability onto boards.

AEC-Q101 ensures reliability under demanding automotive environmental conditions.

PowerDIP® excels thermally even in applications with strict cooling limitations.

Simply the highest current solution available within constrained board area sizes.

On Semiconductor's density optimized leader for designs requiring maximum capability in minimal space.

Ideal for applications where extreme current handling and tight dimensions intersect.