NCV21671SQ100T2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV21671SQ100T2G Power MOSFET:

NCV21671SQ100T2G

The NCV21671SQ100T2G delivers industry-leading RDS(on) density in ON Semiconductor's miniature DFN PowerSSO-6 package. As a 71A N-channel MOSFET optimized for applications requiring extremely restricted board area, it maximizes thermal dissipation from an ultra-compact footprint.

Key Features:

• 60V voltage rating
• 71A continuous drain current capability
• 18mΩ typical RDS(on)
• DFN PowerSSO-6 ultra-small package
• Low 3°C/W thermal resistance
• -55°C to 150°C operating temperature range
• Optimized for server and telecom power systems
• Outperforms much larger competing packages

PowerSSO-6's microscopic density enables highest current density in absolute minimal footprints.

Allows maximum current handling within most restrictively constrained board spaces.

Reliable operation even under extreme thermal challenges set in smallest board areas.

Industry-leading thermal efficiencies maximize performance given absolutely no wasted board space.

Simply offers the highest power MOSFET density for applications with "zero tolerance" PCB real estate.

Perfect for hyperscale computing and networking hardware where millimeters directly impact functionality.