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Here is a suggested product introduction for the ON Semiconductor NCV20092DR2G Power MOSFET:
NCV20092DR2G
The NCV20092DR2G Power MOSFET from ON Semiconductor delivers leading-edge efficiency in an ultra-compact SOT-523. As a 19A N-channel MOSFET optimized for stringent density demands, it maximizes current handling within rigid size constraints.
Key Features:
At 1.2x1.5mm, SOT-523 is simply the smallest package while retaining full functionality.
Ultra-low RDS(on) ensures maximum efficiency despite rigid size limitations.
Thermal performance guaranteed despite restrictive design conditions.
The ideal solution for any application where space is ultra-critical.
Simply provides the ultimate in power MOSFET density optimization.
Enables innovations previously impossible due to footprint constraints.