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NCV303LSN45T1G onsemi

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NCV303LSN45T1G onsemi

Country/Region china
City & Province shenzhen
Categories Fuse Components
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Product Details

Here is the English information on the NCV303LSN45T1G chip:

The NCV303LSN45T1G is an N-channel power MOSFET from ON Semiconductor.

Key Specifications:

  • Breakdown voltage: 45V
  • On-resistance: 3.0 mΩ (typ)
  • Continuous drain current: 150A
  • Fast switching speeds
  • TO-262 package

Designed for applications requiring high current switching capabilities up to 150A continuous duty.

Its low on-resistance enables efficient power handling at very high currents.

Fast switching characteristics improve efficiency at high frequencies.

The TO-262 package provides excellent thermal dissipation for currents exceeding 150A.

Well-suited for motor drive controls, high power DC/DC converters, traction controllers, welding equipment and other industrial applications with current requirements above 150A.

Also suitable for renewable energy conversion, electric vehicle drive systems and heavy equipment motor drives.

In summary, the NCV303LSN45T1G offers a robust power MOSFET solution optimized for very high continuous current switching up to 150A.

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