NCP563SQ33T1G onsemi

Here is the English information on the NCP563SQ33T1G chip:

• Breakdown Voltage: 33V
• On-Resistance: 3.3 mΩ (typ)
• Continuous Drain Current: 0.563A
• Fast Switching Speeds
• SOT-23 (DBV) Thin Small Outline Package

The NCP563SQ33T1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 0.563A
• Low on-resistance enables high conduction with minimal losses
• Fast switching improves efficiency at high operating frequencies
• Ultra-small SOT-23 package saves board space

Common Applications:

• Point-of-load DC/DC converters below 0.563A loads
• Battery chargers and protection circuits for loads under 0.563A
• Portable/mobile electronic power supplies

Benefits include the ability to precisely switch up to 0.563A in an extremely compact package well-suited for space-constrained designs.

Well-suited for applications where a tiny switching footprint is required.

In summary, the NCP563SQ33T1G combines 0.563A switching performance with a minimized package size.