FSB50825AB onsemi / Fairchild

Here is the English description of the FSB50825AB chip:

• Drain-Source Breakdown Voltage: 25V
• Drain Continuous Current: 50A
• On-Resistance: 8.5 mΩ (max)
• Gate Threshold Voltage: 2-4V
• Package: IGBT6/TO247AC

The FSB50825AB is an N-Channel Power MOSFET from ON Semiconductor.

Key Features:

• High continuous drain current rating of 50A
• 25V breakdown voltage for low voltage applications
• Extremely low on-resistance of 8.5 mΩ reduces conduction losses
• TO247AC package provides excellent thermal dissipation
• Safe operating area allows high current pulses

Common Applications:

• Very high current DC-DC converters, inverters, motor drivers
• Industrial power control circuits requiring up to 50A loads
• Heavy switching at currents near 50A

Benefits include industry-leading 50A continuous current handling and switching in a robust package.

Well-suited for applications with current loads exceeding 40A continuously at voltages under 25V.

In summary, the FSB50825AB enables switching and conducting of extremely high 50A currents in a thermally optimized package. It is ideal for demanding very high current applications.