NCP380LSN10AAT1G onsemi

Here is the English description of the NCP380LSN10AAT1G chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 3.8A
• On-Resistance: 10 mΩ (typ)
• Fast Switching Speeds
• PowerSO-8 Package

The NCP380LSN10AAT1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of currents up to 3.8A
• Low RDS(on) of 10 mΩ for minimal conduction losses
• Fast switching improves efficiency at high frequencies
• PowerSO-8 package provides good thermal dissipation

Common Applications:

• Point-of-load DC/DC converters below 3.8A loads
• Motor drivers and controls under 3.8A load current
• General purpose switching under 3.8A load

Benefits include the ability to precisely switch up to 3.8A with industry-leading low resistance and losses.

Well-suited for applications requiring switching of currents up to 3.8A where low conduction losses are important.

In summary, the NCP380LSN10AAT1G offers 3.8A switching capability with ultra low on resistance in a package with good heat transfer.