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NCL30186DDR2G onsemi

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NCL30186DDR2G onsemi

Country/Region china
City & Province shenzhen
Categories Electrical Plugs & Sockets
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Product Details

Here is the English description of the NCL30186DDR2G chip:

  • Function: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.186A
  • On-Resistance: 20mΩ (typ)
  • Speed: Fast Switching
  • Package: TO-263-8 PowerFLAT®

The NCL30186DDR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Designed for efficient switching up to 3.186A
  • Ultra-low RDS(on) of 20mΩ minimizes conduction losses
  • Fast switching enables high efficiency operation
  • TO-263-8 PowerFLAT® package saves board space

Common Applications:

  • Point-of-load DC/DC converters under 3.186A loads
  • Motor driver circuits requiring up to 3.186A
  • Where high density and minimized size is important

Benefits include reliable 3.186A switching capability with excellent low resistance. Compact PowerFLAT® package optimizes footprint.

Well-suited for applications requiring precise 3.186A current control where minimal size is essential.

In summary, the NCL30186DDR2G delivers high performance switching in a compact and efficient package optimized for higher density designs.

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