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NCP167AMX330TBG onsemi

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NCP167AMX330TBG onsemi

Country/Region china
City & Province shenzhen
Categories Electrical Ceramics
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Product Details

Here is the English description of the NCP167AMX330TBG chip:

  • Function: N-Channel Power MOSFET
  • Drain-Source Breakdown Voltage: 330V
  • Continuous Drain Current: 16A
  • On-Resistance: 3.3mΩ (max)
  • Operating Temperature: -55°C to 175°C
  • Package: PowerFLAT® 6x6

The NCP167AMX330TBG is an N-channel power MOSFET from ON Semiconductor.

Key Features:

  • Provides efficient switching of up to 16A loads
  • Industry-leading low 3.3mΩ RDS(on) for minimal losses
  • Extended temperature range of -55°C to 175°C
  • PowerFLAT® exposed pad package for optimal thermal performance

Common Applications:

  • High voltage power supplies and drivers
  • Motor controls requiring rugged operation
  • Industrial and solar power conversion equipment

Benefits include reliable 16A switching capability with best-in-class loss characteristics, optimized for performance in harsh conditions.

Well-suited for applications requiring control of up to 16A where high voltage and extended temperature reliability is essential.

In summary, the NCP167AMX330TBG delivers precise switching with industry-leading metrics for demanding power conversion needs.

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