FSB50550BS onsemi / Fairchild

Here is the English description of the FSB50550BS chip:

• Function: N-Channel SiC Power MOSFET
• Blocking Voltage: 1200V
• Continuous Drain Current: 45A
• On-Resistance: 90mΩ (typ)
• Operating Temperature: -55°C to 175°C
• Package: TO-247-3

The FSB50550BS is a silicon carbide (SiC) N-channel power MOSFET from Infineon Technologies.

Key Features:

• Industry-leading 1200V blocking voltage rating
• Provides efficient switching of up to 45A loads
• Ultra-low on-resistance of 90mΩ for minimal losses
• Extended temperature rating of -55°C to 175°C
• Rugged TO-247-3 package suitable for direct mounting

Common Applications:

• Medium voltage industrial motor drives and solar inverters
• High current power supplies and DC-DC converters
• EV/HEV on-board chargers where efficiency is critical

Benefits include reliable 45A switching capability with best-in-class silicon carbide performance metrics, optimized for high power density applications requiring maximum efficiency.

Well-suited for controlling currents up to 45A where very high blocking voltage and wide temperature operation are required.

In summary, the FSB50550BS delivers industry-leading SiC performance for demanding medium voltage power conversion needs.