|
[China]
Trade Verify
Address: Fl12,Tower E XingHe World LongHua District Shenzhen China 518000
Contact name:Sophia
Angel Technology Electronics Co |
|
Verified Suppliers
|
|
|
IRLR3915TRPBF Infineon Technologies/International Rectifier IOR HEXFET MOSFET N-Channel 55V 30A DPAK Discrete Semiconductor Products
N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features :
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D-Pak IRLR3915PbF I-Pak IRLU3915PbF Lea
| Part number | IRLR3915TRPBF |
| Base part number | IRLR3915 |
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | Active |
| HTS | 8541.29.00.95 |
Category | Discrete Semiconductor Products |
Transistors - FETs, MOSFETs - Single | |
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Tape & Reel (TR) |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
Rds On (Max) @ Id, Vgs | 14mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 120W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-Pak |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Base Product Number | IRLR3915 |
