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N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets

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N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets

Country/Region china
City & Province shenzhen hongkong
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Product Details

SIHF10N40D-E3 power mosfets N channel transistor operates in enhancement mode
 
Vishay's SIHF10N40D-E3 maximum power dissipation is 33000 mW. This N channel MOSFET transistor operates in enhancement mode.

This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

If you need to either amplify or switch between signals in your design, then Vishay's SIHF10N40D-E3 power MOSFET is for you.
 

Product Technical Specifications

EU RoHSCompliant
ECCN (US)EAR99
Part StatusActive
HTS8541.29.00.95
AutomotiveNo
PPAPNo
Product CategoryPower MOSFET
ConfigurationSingle
Channel ModeEnhancement
Channel TypeN
Number of Elements per Chip1
Maximum Drain Source Voltage (V)400
Maximum Gate Source Voltage (V)±30
Maximum Gate Threshold Voltage (V)5
Maximum Continuous Drain Current (A)10
Maximum Gate Source Leakage Current (nA)100
Maximum IDSS (uA)1
Maximum Drain Source Resistance (MOhm)600@10V
Typical Gate Charge @ Vgs (nC)15@10V
Typical Gate Charge @ 10V (nC)15
Typical Input Capacitance @ Vds (pF)526@100V
Maximum Power Dissipation (mW)33000
Typical Fall Time (ns)14
Typical Rise Time (ns)18
Typical Turn-Off Delay Time (ns)18
Typical Turn-On Delay Time (ns)12
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
Supplier PackageTO-220FP
Pin Count3
Standard Package NameTO-220
MountingThrough Hole
Package Height16.12(Max)
Package Length10.63(Max)
Package Width4.83(Max)
PCB changed3
TabTab
Lead ShapeThrough Hole
Part numberSIHF10N40D-E3
Base part numberSIHF10N40
EU RoHSCompliant with Exemption
ECCN (US)EAR99
Part StatusActive
HTS8541.29.00.95

 

 

 

 

 
 

 

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