Active Member
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[China]
Address: Shahe Industrial Park, Changping District, Beijing, China
Contact name:Mi Tian
Hi-Tech Optoelectronics Co., Ltd |
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808nm , 300mW output power, TO-56 Packaged Laser Diode with Beam Shaping Ball Lens
HTOE LDM-0808-300m-*0 is a highly efficient semiconductor laser diode which provides emission wavelength of 808nm and standard light output of 300mW (CW). LDM-0808-300m-*0 adopts a TO-56 package, while installes beam shaping ball lens. The shaped laser beam provides smaller divergency for both fast axis and slow axis. The colimated laser beam is more convenient for customers to design their own optical system. Featured and benefited a high reliable operating and a narrow emitting width 40µm, LDM-0808-300m-*0 allows to operate with a high quality laser beam, It's ideal for pumping Nd:YAG and illumination applications.
LDM-0808-300m-*0 belongs to HTOE's LDM series, which based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands.
Features
Applications
Parameters(25℃)
| TOØ56 Packaged Single Emitter | |||||
| Item | Parameter | Unit | LDM-0808-300m-*0 | ||
| Min. | Typical | Max. | |||
| Optical Parameter | Output power | mW | - | 300 | - |
| Lasing Wavelength | nm | 804 | 808 | 812 | |
| Spectral Width | nm | - | 1.0 | 2.0 | |
| Emitting Area width | µm | - | 40 | - | |
| Temperature Coefficient | nm/℃ | - | 0.30 | - | |
| Fast Axis Divergence | deg | 1 | - | - | |
| Slow Axis Divergence | deg | 1 | - | - | |
| Electrical Parameter | Slope Efficiency | W/A | 1.0 | - | - |
| Threshold Current | A | - | 0.06 | 0.10 | |
| Operating Current | A | - | - | 0.33 | |
| Operating Voltage | V | - | 1.80 | 2.00 | |
| Others | Package | - | TOØ56 | ||
| Operating Temperature | ℃ | 10 ~ 50 | |||
| Storage Temperature | ℃ | -10 ~ 60 | |||
Package Information
TOØ56 Package
Function Curve
P-I-V Curve Spectral Curve
Notice
1. Item model notice: LDM (Item model), **** (Center wavelength), **** (Output power), ** (Heat sink structure and item width).
2. Data in the sheet are all based on TOØ56 package testing.
3. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.
ESD Cautions
The primary cause of diode failure is unexpected electrostatic discharge. To help prevent device failures, be sure to handle devices with extreme care. Users should always wear an ESD wrist strap, ground all applicable work surfaces and follow anti-static techniques when handling diode lasers.
Operating Considerations
Operating the diode laser outside of its maximum ratings may present a safety hazard or cause a device failure. Additionally, excessive drive current or switching transients can damage CW diode lasers. DO NOT exceed the maximum peak optical power. Before turning the power supply on, connect the component to the power supply and ensure the output voltage value is zero. After the component has been successfully connected, increase the current slowly and monitor both the output power and drive current. Device degradation accelerates with increased temperature; therefore, careful attention to minimizing the case temperature is advised. A proper heat-sink for the diode laser on a thermal radiator will greatly enhance laser life.
