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98% grade black silicon carbide / SiC for sandblasting
Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. It occurs in nature as the extremely rare mineral moissanite. Synthetic silicon carbide powder has been mass-produced since 1893 for use as an abrasive. Grains of silicon carbide can be bonded together by sintering to form very hard ceramics that are widely used in applications requiring high endurance, such as car brakes, car clutches and ceramic plates in bulletproof vests. Electronic applications of silicon carbide such as light-emitting diodes (LEDs) and detectors in early radios were first demonstrated around 1907. SiC is used in semiconductor electronics devices that operate at high temperatures or high voltages, or both. Large single crystals of silicon carbide can be grown by the Lely method; they can be cut into gems known as synthetic moissanite. Silicon carbide with high surface area can be produced from SiO2 contained in plant material.
98% grade black silicon carbide / SiC for sandblasting
Extremely hard and sharp abrasive
Will produce a matte surface finish
Capable of metal removal
Highly friable abrasive media which is reusable but less durable
than brown aluminum oxide
Cleaning or etching the hardest sub-surfaces
May be required for some applications that require brazing or
welding after blasting
Used for grinding, lapping, and wire saw cutting as well as
abrasive blasting
The specifications of silicon carbide
Angular shape
MOHs hardness: 9.5
Highly friable abrasive
Micro grits available
Approximately 105 lbs/cu. ft. bulk density
Manufactured to ANSI Table 2 grit sizes
Custom grit sizes and blends available
98% grade black silicon carbide / SiC for sandblasting
98% grade black silicon carbide / SiC for sandblasting
Grit Size Available (P, F)
P series: P24, P30, P36, P40, P50, P60, P80, P100, P120, P150,
P180, P220, P240, P280, P320, P360, P400, P500, P600, P800, P1000,
P1200, P1500, P2000, P2500, P3000
F series: F14, F16,F22,F24,F30, F36, F40, F46, F54, F60, F70, F80,
F90, F100, F120, F150, F180, F220, F230, F240, F280, F320, F360,
F400, F500, F600, F800, F1000, F1200
other special specification and other standard graded powder is
available on request
Production
Black Silicon Carbide is mainly made of Quartz sand, petroleum
coke, smelted by above2500°Cin the electric furnace. The hardness
is between corundum and diamond. The Hardness is superior to
corundum, it has the function of conductivity and thermal
conductivity. It is suitable to process metals and non-metallic
materials, such as gray cast iron, non-ferrous metal, stone,
leather, rubber, and on on. It also widely used in refractories,
metallurgic additives.
Because of the rarity of natural moissanite, most silicon carbide
is synthetic. It is used as an abrasive, and more recently as a
semiconductor and diamond simulant of gem quality. The simplest
manufacturing process is to combine silica sand and carbon in an
Acheson graphite electric resistance furnace at a high temperature,
between 1,600 °C (2,910 °F) and 2,500 °C (4,530 °F). Fine SiO2
particles in plant material (e.g. rice husks) can be converted to
SiC by heating in the excess carbon from the organic material. The
silica fume, which is a byproduct of producing silicon metal and
ferrosilicon alloys, also can be converted to SiC by heating with
graphite at 1,500 °C (2,730 °F)
Synthetic SiC crystals ~3 mm in diameter.
Synthetic SiC Lely crystals
The material formed in the Acheson furnace varies in purity,
according to its distance from the graphite resistor heat source.
Colorless, pale yellow and green crystals have the highest purity
and are found closest to the resistor. The color changes to blue
and black at greater distance from the resistor, and these darker
crystals are less pure. Nitrogen and aluminium are common
impurities, and they affect the electrical conductivity of SiC.
Pure silicon carbide can be made by the so-called Lely process, in
which SiC powder is sublimated into high-temperature species of
silicon, carbon, silicon dicarbide (SiC2), and disilicon carbide
(Si2C) in an argon gas ambient at 2500 °C and redeposited into
flake-like single crystals,sized up to 2×2 cm, at a slightly colder
substrate. This process yields high-quality single crystals, mostly
of 6H-SiC phase (because of high growth temperature). A modified
Lely process involving induction heating in graphite crucibles
yields even larger single crystals of 4 inches (10 cm) in diameter,
having a section 81 times larger compared to the conventional Lely
process.Cubic SiC is usually grown by the more expensive process of
chemical vapor deposition (CVD).Homoepitaxial and heteroepitaxial
SiC layers can be grown employing both gas and liquid phase
approaches.Pure silicon carbide can also be prepared by the thermal
decomposition of a polymer, poly(methylsilyne), under an inert
atmosphere at low temperatures. Relative to the CVD process, the
pyrolysis method is advantageous because the polymer can be formed
into various shapes prior to thermalization into the ceramic.
