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ON Semiconductor / Fairchild MMBT4401 MCU Component Microcontroller Flash IC Chips MMBT4401 QFY has a wide and unobstructed channel for supply source, and reserves a large number ...
china
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Product Listing: IRF6620TRPBF MOSFET Voltage: 100V Current: 13A Drain-Source On-Resistance: 0.088 Ohm Rdson: 7.2mOhm Static Drain-Source Breakdown Voltage: 100V Gate-Source ...
china
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Original New Transistor Mosfet Diodes SOT-23(SOT-23-3) LN2302BLT1G Products Description: 1. Exceptional on-resistance and maximum DC current capability 2. Super high density cell ...
Guangdong, china
Verified
DMN26D0UT-7 DMN26 Diodes N-Channel mosfet Surface Mount SOT-523 N-Channel 20 V 230mA (Ta) 300mW (Ta) Surface Mount SOT-523 Specification :MOSFET N-CH 20V 230MA SOT523 Category ...
HongKong, china
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SIR426DP-T1-GE3 MOSFETs N-Channel 40 V 30A 4.8W 41.7W Surface Mount PowerPAK® MOSFET N-CH 40V 30A PPAK SO-8 Specifications of SIR426DP-T1-GE3 TYPE DESCRIPTION Category Single FETs, ...
Guangdong, china
Verified
ON Semiconductor / Fairchild MMBT3906 Electronic Components Integrated Circuits IC Chips Diodes Transion-Semior QFY has a wide and unobstructed channel for supply source, and ...
china
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Product Listing: IRFL4310TRPBF MOSFET Parameters: • Drain-Source Voltage: 100V • Continuous Drain Current: 11A • Drain-Source On-Resistance: 0.015ohm • Rds(on) Test Voltage: 4.5V • ...
china
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CG3 2.7L Gas Discharge Tube 2700 V 5000A (5kA) 2 Pole Through Hole GDT 2700V 5KA 2 POLE TH Specifications of SI1416EDH-T1-GE3 TYPE DESCRIPTION Category Single FETs, MOSFETs Mfr ...
Guangdong, china
Verified
Product Listing: Product: IRFH5010TRPBF MOSFET Parameters: • Drain-Source Voltage: 100V • Gate-Source Voltage: ±20V • Drain Current: 10A • Drain-Source On-State Resistance: 1.2Ohm ...
china
Verified
SIR662DP-T1-GE3 N-Channel MOSFETs 60 V 60A (Tc) 6.25W (Ta), 104W (Tc) MOSFET N-CH 60V 60A PPAK SO-8 Surface Mount PowerPAK® SO-8 Specifications of SIR662DP-T1-GE3 TYPE DESCRIPTION ...
Guangdong, china
Verified
Product: IRFH5406TRPBF MOSFET Parameters: • Drain-Source Voltage: 100V • Continuous Drain Current: 8.3A • Drain-Source On-Resistance: 0.018 Ohm • Maximum Power Dissipation: 11W • ...
china
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BSP318S H6327 N-Channel 60 V 2.6A (Tj) 1.8W (Ta) Surface Mount PG-SOT223-4 Specifications of BSP318S H6327 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors ...
Guangdong, china
Verified
Product Listing: IRF6218STRLPBF MOSFET Parameters: Drain-Source Voltage (Vdss): 200V Drain Current (Id): 20A Gate-Source Voltage (Vgs): 10V P-Channel Drain-Source On-Resistance ...
china
Verified
Product Listing: IRLB4132PBF HEXFET Power MOSFET Product Type: MOSFET Package Type: TO-220 Vds - Drain-Source Breakdown Voltage: 55V Rds On - Drain-Source Resistance: 4.7 Ohms Id - ...
china
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Product Listing: IRFS4127TRLPBF MOSFET Product Parameters: • Voltage: 100 V • Drain-Source On-Resistance: 16 mΩ • Drain-Source Breakdown Voltage: 100 V • Gate-Source Breakdown ...
china
Verified
Product Listing: IRFB3206PBF N-Channel Power MOSFET • Drain-Source Voltage: 100V • Continuous Drain Current: 37A • Power Dissipation: 45W • Drain-Source On Resistance: 0.013Ohm • ...
china
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Product Name: IRF7807ZTRPBF MOSFET Parameters: -VDS (Drain-Source Voltage): 100V -VGS (Gate-Source Voltage): 10V -ID (Continuous Drain Current): 5.6A -RDS(on) (Drain-Source On...
china
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Product Listing: IRF8707TRPBF MOSFET •Vds - Drain-Source Voltage: 55V •Rds On - Drain-Source Resistance: 0.020 Ohm •Id - Continuous Drain Current: 20A •Vgs - Gate-Source Voltage: ...
china
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Product Listing: IRFIB5N65APBF MOSFET Package: TO-220AB Drain-Source Voltage: 650V Continuous Drain Current: 25A Drain-Source On-State Resistance: 0.06ohm Gate-Source Voltage: ±20V ...
china
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Product Name: N-Channel Enhancement Mode MOSFET Product Model: IPP023N10N5 Parameter: Drain-Source Voltage: 100V Continuous Drain Current: 23A Pulsed Drain Current: 115A Maximum ...
china
Verified
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