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general purpose transistor 200a

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BC337 NPN general purpose transistor FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification, e.g. driver and ...
Guangdong, china
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General Purpose Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc-Dc Converters Description Single MOSFET Die,N-Channel Enhancement Mode Avalanche Rated, Low Qg IXYS Gen1 Trench ...
Guangdong, china
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Silicon Power npn general purpose transistor 2N6038 TO -126 package DESCRIPTION ·With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain ...
Guangdong, china
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PNP GENERAL PURPOSE TRANSISTORS FEATURES General Purpose Amplifier Applications NPN Epitaxial Silicon, Planar Design Collector Current IC = -100mA Complimentary (PNP) Devices : ...
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NPN General Purpose Transistor Maximum Ratings ( TA=25°C unless otherwise noted) Rating Symbol BC546 BC547 BC548 Unit Collector-Emitter Voltage VECO 65 45 30 Vdc Collector-Base ...
Guangdong, china
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2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A ORDERING INFORMATION ...
Guangdong, china
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KSP2907A General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon ...
Guangdong, china
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2N3903, 2N3904 2N3903 is a Preferred Device General Purpose Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base ...
Guangdong, china
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KSP2907A General Purpose Transistor • Collector-Emitter Voltage: VCEO= 60V • Collector Power Dissipation: PC (max)=625mW • Refer to KSP2907 for graphs PNP Epitaxial Silicon ...
Guangdong, china
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BC807−16LT1, BC807−25LT1, BC807−40LT1 General Purpose Transistors PNP Silicon Features • Pb−Free Packages are Available Maximum ratings are those values beyond which device damage ...
Guangdong, china
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BC848B NPN General Purpose Transistor Features Low voltage (max. 65 V). Low current (max. 100 mA). Parameter Symbol BC846 BC847 BC848 Unit Collector-base voltage V CBO 80 50 30 V ...
Guangdong, china
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BC847BLT1G General Purpose Transistors Features Moisture Sensitivity Level: 1 ESD Rating ESD Rating These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Stresses ...
Guangdong, china
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BC848B NPN General Purpose Transistor Parameter Symbol BC846 BC847 BC848 Unit Collector-base voltage VCBO 80 50 30 V Collector-emitter voltage VCEO 65 45 30 V Emitter-base voltage ...
Guangdong, china
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SS495A1 Rectifier Diode General Purpose Transistors Ic Chip Electronics FEATURES: 1 Small size (.160 × .118N) 1 Low power consumption - typically 7 mA at 5 VDC 1 Single current ...
Guangdong, china
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SOT-23 BIPOLAR TRANSISTORS TRANSISTOR (NPN) FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage MECHANICAL DATA ...
Guangdong, china
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STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET General Features TYPE VDSS RDS(on) ID STP20NM60 ...
Guangdong, china
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STB75NF75 STP75NF75 - STP75NF75FP N-channel 75V - 0.0095Ω - 80A - TO-220 - TO-220FP - D2PAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STB75NF75 75V <0.011Ω ...
Guangdong, china
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BFG135 NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small ...
Guangdong, china
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BFQ67 / BFQ67R / BFQ67W Silicon NPN Planar RF Transistor Features • Small feedback capacitance • Low noise figure • High transition frequency • Lead (Pb)-free component • Component ...
Guangdong, china
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Silicon PNP Power Transistors 2SA940 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2073 APPLICATIONS ·Power amplifier applications ·Vertical output applications Absolute ...
Guangdong, china
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