Active Member
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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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6H Semi-Insulating SiC Substrate, Research Grade,Epi Ready,2”Size
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.
Here shows detail specification:
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
6H Semi-Insulating SiC Substrate, Research Grade,Epi Ready,2”Size
| SUBSTRATE PROPERTY | S6H-51-SI-PWAM-250 S6H-51-SI-PWAM-330 S6H-51-SI-PWAM-430 |
| Description | Research Grade 6H SEMI Substrate |
| Polytype | 6H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Resistivity (RT) | >1E5 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation | |
| On axis <0001>± 0.5° | |
| Off axis 3.5° toward <11-20>± 0.5° | |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | 16.00 ± 1.70 mm |
| Secondary flat orientation Si-face:90° cw. from orientation flat ± 5° | |
| C-face:90° ccw. from orientation flat ± 5° | |
| Secondary flat length | 8.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
SiC Crystal Structure
SiC Crystal has many different crystal structures,which is called polytypes.The most common polytypes of SiC presently being developed for electronics are the cubic 3C-SiC, the hexagonal 4H-SiC and 6H-SiC, and the rhombohedral 15R-SiC. These polytypes are characterized by the stacking sequence of the biatom layers of the SiC structure.For more details, please enquire our engineer team.
Saturation Velocity:
Saturation velocity is the maximum velocity a charge carrier in a
semiconductor, generally an electron, attains in the presence of
very high electric fields[1]. Charge carriersnormally move at an
average drift speed proportional to the electric field strength
they experience temporally. The proportionality constant is known
as mobility of the carrier, which is a material property. A good
conductor would have a high mobility value for its charge carrier,
which means higher velocity, and consequently higher current values
for a given electric field strength. There is a limit though to
this process and at some high field value, a charge carrier can not
move any faster, having reached its saturation velocity, due to
mechanisms that eventually limit the movement of the carriers in
the material.
When designing semiconductor devices, especially on a sub-micrometre scale as used in modern microprocessors, velocity saturation is an important design characteristic. Velocity saturation greatly affects the voltage transfer characteristics of a field-effect transistor, which is the basic device used in most integrated circuits designed and produced in the world. If a semiconductor device enters velocity saturation, an increase in voltage applied to the device will not cause a linear increase in current as would be expected by Ohm's law. Instead, the current may only increase by a small amount, or not at all. It is possible to take advantage of this result when trying to design a device that will pass a constant current regardless of the voltage applied, a current limiter in effect.
