Active Member
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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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N Type , Indium Arsenide Wafer , 4”, Test Grade -Compound Semiconductor
PAM-XIAMEN offers InAs wafer – Indium Arsenide which are grown by LEC(Liquid Encapsulated Czochralski) or VGF(Vertical Gradient Freeze) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111),(100) or (110). PAM-XIAMEN can provide epi ready grade InAs wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.
4" InAs Wafer Specification
| Item | Specifications | |
| Dopant | Stannum | Sulphur |
| Conduction Type | N-type | N-type |
| Wafer Diameter | 4" | |
| Wafer Orientation | (100)±0.5° | |
| Wafer Thickness | 900±25um | |
| Primary Flat Length | 16±2mm | |
| Secondary Flat Length | 8±1mm | |
| Carrier Concentration | (5-20)x1017cm-3 | (1-10)x1017cm-3 |
| Mobility | 7000-20000cm2/V.s | 6000-20000cm2/V.s |
| EPD | <5x104cm-2 | <3x104cm-2 |
| TTV | <15um | |
| BOW | <15um | |
| WARP | <20um | |
| Laser marking | upon request | |
| Suface finish | P/E, P/P | |
| Epi ready | yes | |
| Package | Single wafer container or cassette | |
What is the InAs Process?
InAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.
| Bulk modulus | 5.8·1011 dyn cm-2 |
| Density | 5.68 g cm-3 |
| Hardness on the Mohs scale | 3.8 |
| Surface microhardness (using Knoop's pyramid test) | 430 kg mm-2 |
| Cleavage plane | {100} |
| Piezoelectric constant | e14= -4.5·10-2 C m-2 |
| Electron g - factor | |
| 298 K | -17.5 |
| 80 K | -15.4 |
C11=8.34·1011 dyn/cm2
C12=4.54·1011 dyn/cm2
C44=3.95·1011 dyn/cm2
 | Temperature dependences of elastic constants. |
For T= 200K
| Bulk modulus (compressibility-1) | Bs= 5.81·1011 dyn/cm2 |
| Shear modulus | C'= 1.90·1011 dyn/cm2 |
| [100] Young's modulus | Yo= 5.14·1011 dyn/cm2 |
| [100] Poisson ratio | σo = 0.35 |
| Wave propagation Direction | Wave character | Expression for wave speed | Wave speed (in units of 105 cm/s) |
| [100] | VL | (C11/ρ )1/2 | 3.83 |
| VT | (C44/ρ )1/2 | 2.64 | |
| [100] | Vl | [(C11+C12+2C44)/2ρ]1/2 | 4.28 |
| Vt|| | Vt||=VT=(C44/ρ)1/2 | 2.64 | |
| Vt⊥ | [(C11-C12)/2ρ]1/2 | 1.83 | |
| [111] | Vl' | [(C11+2C12+4C44)/3ρ]1/2 | 4.41 |
| Vt' | [(C11-C12+C44)/3ρ]1/2 | 2.13 |
(in units of 1012 Hz)
| νTO(Γ) | 6.44 | νLO (X) | 6.20 |
| νLO(Γ) | 7.01 | νTA(L) | 1.50 |
| νTA(X) | 1.70 | νLA(L) | 4.46 |
| νLA(X ) | 4.94 | νTO(L) | 6.44 |
| νTO(X ) | 6.47 | νLO(L) | 6.26 |
Are You Looking for an InAs substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InAs wafers, send us enquiry today to learn more about how we can work with you to get you the InAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
