Active Member
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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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N Type , InSb Substrate , 3”, Dummy Grade -Compound Semiconductor
PAM-XIAMEN manufactures high purity single crystal InSb(Indium Antimonide) Wafers for photodiodes or photoelectromagnetic device, Magnetic field sensors using magnetoresistance or the Hall effect, fast transistors (in terms of dynamic switching) due to the high carrier mobility of InSb, in some of the detectors of the Infrared Array Camera on the Spitzer Space Telescope. Our standard wafer diameters range from 1 inch to 3 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer InSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.
N Type, InSb Substrate, 3”, Dummy Grade
| Wafer Specification | |
| Item | Specifications |
| Wafer Diameter |
3″ 76.2±0.4mm |
| Crystal Orientation |
3″ (111)AorB±0.1° |
| Thickness |
3″ 800or900±25um |
| Primary flat length |
3″ 22±2mm |
| Secondary flat length |
3″ 11±1mm |
| Surface Finish | P/E, P/P |
| Package | Epi-Ready,Single wafer container or CF cassette |
| Electrical and Doping Specification | |||
| Conduction Type | n-type | n-type | n-type |
| Dopant | Tellurium | Low tellurium | High tellurium |
| EPD cm-2 | ≤50 | ||
| Mobility cm² V-1s-1 | ≥2.5*104 | ≥2.5*105 | Not Specified |
| Carrier Concentration cm-3 | (1-7)*1017 | 4*1014-2*1015 | ≥1*1018 |
| Infrared refractive index | 4.0 |
| Radiative recombination coefficient | 5·10-11 cm3s-1 |
For 120K < T < 360K dn/dT = 1.6·10-11·n
 | Refractive index n versus photon energy, 300 K. |
 | Normal incidence reflectivity versus photon energy, 300 K. |
 | Absorption coefficient near the intrinsic absorption edge, T = 2K |
A ground state Rydberg energy RX1= 0.5 meV.
 | Absorption coefficient near the intrinsic absorption edge for
different temperatures |
 | Absorption edge of pure InSb. T (K): 1. 298; 2. 5K; |
 | Absorption coefficient versus photon energy, T = 300 K. |
 | Absorption coefficient versus photon energy at different doping
levels, n-InSb, T = 130 K no (cm-3): 1. 6.6·1013; 2. 7.5·1017; 3. 2.6·1018; 4. 6·1018; |
 | Absorption coefficient versus photon energy at different doping
levels, p-InSb, T = 5K. po (cm-3): 1. 5.5·1017; 2. 9·1017; 3. 1.6·1018; 4. 2.6·1018; 5. 9.4·1018; 6. 2·1019; |
Are You Looking for an InSb substrate?
PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for InSb wafers, send us enquiry today to learn more about how we can work with you to get you the InSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
