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N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer Company

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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer Company

Country/Region	china
City & Province	xiamen fujian

Product Details

N Type , Te-Doped GaSb Wafer , 2”, Test Grade -Wafer Company

PAM-XIAMEN provides single crystal GaSb(Gallium Antimonide) wafer growth by Liquid Encapsulated Czochralski ( LEC ) method. GaSb(Gallium Antimonide) can be supplied as wafers with as-cut, etched or polished finishes and are available in a wide range of carrier concentration, diameter and thickness. PAM-XIAMEN can provide epi ready grade GaSb wafer for your MOCVD & MBE epitaxial application .Please contact our engineer team for more wafer information.

2" GaSb Wafer Specification
Item	Specifications
Dopant	Tellurium
Conduction Type	N-type
Wafer Diameter	2"
Wafer Orientation	(100)±0.5°
Wafer Thickness	500±25um
Primary Flat Length	16±2mm
Secondary Flat Length	8±1mm
Carrier Concentration	(1-20)x10¹⁷cm^-3
Mobility	2000-3500cm²/V.s
EPD	<2x10³cm^-2
TTV	<10um
BOW	<10um
WARP	<12um
Laser Marking	upon request
Suface Finish	P/E, P/P
Epi Ready	yes
Package	Single wafer container or cassette

Band structure and carrier concentration of GaSb Wafer

Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Temperature, Dependences,Dependence of the Energy Gap on Hydrostatic Pressure, Effective Masses, Donors and Acceptors

Basic Parameters

Energy gap	0.726 eV
Energy separation (EΓL) between Γ and L valleys	0.084 eV
Energy separation (EΓX) between Γ and X valleys	0.31 eV
Energy spin-orbital splitting	0.80 eV
Intrinsic carrier concentration	1.5·1012 cm-3
Intrinsic resistivity	103 Ω·cm
Effective conduction band density of states	2.1·1017 cm-3
Effective valence band density of states	1.8·1019 cm-3

Band structure and carrier concentration of GaSb. 300 K
Eg= 0.726 eV
EL = 0.81 eV
EX = 1.03 eV
Eso = 0.8 eV

Temperature Dependences

Temperature dependence of the energy gap

Eg = 0.813 - 3.78·10-4·T2/(T+94) (eV),
where T is temperature in degrees K (0 < T < 300).

Temperature dependence of energy EL

EL = 0.902 - 3.97·10-4·T2/(T+94) (eV)

Temperature dependence of energy EX

EX = 1.142 - 4.75·10-4·T2/(T+94) (eV)

Effective density of states in the conduction band

Nc = 4.0·1013·T3/2 (cm-3)

Effective density of states in the conduction band

Nc = 4.0·1013·T3/2 (cm-3)

Effective density of states in the valence band

Nv = 3.5·1015·T3/2 (cm-3)

The temperature dependences of the intrinsic carrier concentration.

Dependences on Hydrostatic Pressure

Eg = Eg(0) + 14.5·10-3P (eV)
EL = EL(0) + 5.0·10-3P (eV)
EX = EX(0) - 1.5·10-3P (eV),
where P is pressure in kbar.

Energy Gap Narrowing at High Doping Levels

Energy gap narrowing versus acceptor acceptor doping density.
Curve is calculated for p-GaSb according to
Points show experimental results

For n-type GaSb

Eg = 13.6·10-9·Nd1/3 + 1.66·10-7·Nd1/4 + 119·10-12·Nd1/2 (eV)

For p-type GaSb

Eg = 8.07·10-9·Na1/3 + 2.80·10-7·Na1/4+ 4.12·10-12·Na1/2 (eV)

Effective Masses

Electrons:

For Γ-valley	mΓ = 0.041mo
In the L- valley the surfaces of equal energy are ellipsoids
	ml= 0.95mo
	mt= 0.11mo
Effective mass of density of states
	mL= 16(mlmt2)1/3= 0.57mo
In the X- valley the surfaces of equal energy are ellipsoids
	ml= 1.51mo
	mt= 0.22mo
Effective mass of density of states
	mX= 9(mlmt2)1/3= 0.87mo

Holes:

Heavy	mh = 0.4mo
Light	mlp = 0.05mo
Split-off band	mso = 0.14mo
Effective mass of density of states	mv = 0.8mo
Effective mass of density of conductivity	mvc = 0.3mo

Donors and Acceptors

The diagram of IV group donor states

Ionization energies of shallow donors (eV)

Te(L)	Te(X)	Se(L)	Se(X)	S(L)	S(X)
~0.02	≤0.08	~0.05	~0.23	~0.15	~0.30

For typical donor concentrations Nd≥ 1017 cm-3 the shallow donor states connected with Γ-valley did not appear.

Ionization energies of shallow acceptors (eV):

The dominant acceptor of undoped GaSb seems to be a native defect.
This acceptor is doubly ionizable

Ea1	Ea2	Si	Ge	Zn
0.03	0.1	~0.01	~0.009	~0.037

Are You Looking for an GaSb substrate?
PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!