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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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12 Inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 12"
Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of semicon doctor semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN’s technologies enable higher performance and lower cost manufacturing of semiconductor wafer. For almost 30 years, PAM-XIAMEN aims to manufacture monocrystalline silicon wafer from the pulling process to get the ingot up to the final step which is the cleaning process, and vertically integrating to epi growth(silicon epi wafer) . This production and epi growth flow allows to maintain a reliable and qualitative consistency. Welcome you to enquire our engineer team, and we will give you full technology support.
12inch Silicon Wafer FZ N Type Phosphorus Doped Orientation 111 Prime Grade 12"
| Type | Conduction Type | Orientation | Diameter(mm) | Resistivity(Ω•cm) |
| High resistance | N&P | <100>&<111> | 50 - 300 | >1000 |
| NTD | N | <100>&<111> | 50 - 300 | 30-800 |
| CFZ | N&P | <100>&<111> | 50 - 300 | 1-50 |
| GD | N&P | <100>&<111> | 50 - 300 | 0.001-300 |
| Parameter | Unit | Value |
| Crystalline structure | - | Monocrystalline |
| Growth technique | - | FZ |
| Crystal Orientation | - | 111 |
| Conductance type | - | N |
| Dopant | - | Phosphorus |
| Diameter | mm | 300±0.2 mm |
| Resistivity | Ω/cm2 | 8000-14000Ωcm |
| Thickness | um | 650±5µm |
| TTV | um | ≤15 um |
| BOW | um | ≤35 um |
| Warp | um | ≤35 um |
| Site Flatness SFQD | um | 20X20mm: 0.40um |
| Surface Metals (Al,Ca,Cu,Fe,Ni,Zn,Cr,Na) | Atoms/cm2 | Max 5E10/cm2 |
| (G)STIR | um | Customer standard |
| Site Flatness-STIR | um | Customer standard |
| Metrology edge exclusion (lpd’s, mechanical parameters) | mm | 3 |
| LPD's | - | LPDs >= 0,30 µm (including COP’s) <=25 LPDs >= 0,20 µm (including COP’s) <=30 LPDs >= 0,16 µm (including COP’s) <=60 |
| Oxygen Concentration | ppma | 11-15 PPMA |
| Carbon Concentration | ppma | <1E16/cc |
| RRG | - | ≤15% |
| Front Surface | - | Polished |
| Back Surface | - | Polished |
| Edge Surface Condition | SEMI STD or Customer Request | |
| Notch | - | SEMI STD |
| Laser mark | - | SEMI STD or Customer Request |
| Packaging | Packaged in a class 100 clean room environment, Heat-sealed plastic inner/aluminium foil outer bags, Vacuum Packing | |
| If specific requirement by customer, will adjust accordingly | ||
| Parameter | Unit | Value |
What is the application of silicon wafer?
Monocrystalline silicon wafer is mainly used to make semiconductor components, its detail application: it is the raw material of semiconductor silicon device, used for making high power rectifier, high power transistor, diode, switch device, etc. Monocrystalline silicon grown by Czochralski method is mainly used in semiconductor integrated circuit, diode, epitaxial wafer substrate and solar cell. Zone melting single crystal is mainly used in the field of high-voltage high-power controllable rectifier devices, widely used in high-power power transmission and transformation, electric locomotive, rectifier, frequency conversion, electromechanical integration, energy-saving lamp, television and other products. Epitaxial wafer are mainly used in the field of integrated circuits
Are You Looking for an Silicon Wafer?
PAM-XIAMEN is your go-to place for semiconductor wafers, including Silicon wafers, as we have been doing it for almost 30 years! Send us enquiry to learn more about the wafers that we offer and how we can help you with your next project. Our group team can give you technology support. send us email at sales@powerwaywafer.com or powerwaymaterial@gmail.com
