Results forgallium oxide ga2o3 substratefrom 853 Products.
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2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LD,10x10mm size GaN chips,HVPE GaN wafer About GaN Feature Introduce The growing demand for high-speed...
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EPI Polish GGG Single Crystal Substrates Gallium Gadolinium Garnet (Gd3Ga5O12 or GGG) single crystal subatrates is used as substrates for liquid epitaxy growth of YIG or BIG film. ...
china
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Back Surface Roughness 0.8~1.2μm Patterned Sapphire Substrates Flat Edge Width 16±1.0mm 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material Patterned Sapphire ...
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C-axis (0001) orientation 8inch diameter 200mm with notch DSP Sapphire Substrate wafers thickness 1.15mm C-a Sapphire application Application Sapphire wafer and substrate ...
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2inch 4inch 6inch GaN-ON-sapphire Blue led Green LED epi-wafer PSS Wafers 2inch 4inch uGaN/nGaN/pGaN-on-Sapphire template epi-wafers As a leading manufacturer and supplier of GaN ...
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YIG SGGG Substrates Wafer SGGG single crystal, substituted gadolinium gallium garnet is grown by Czochralski method . SGGG substrate is excellent for for growing bismuth-substitute...
china
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5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
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The chemical formula is Gd3Ga5O12 crystal. It belongs to the cubic crystal system. Nd∶GGG doped with Nd is an excellent laser crystal, which can obtain pulsed laser output at room ...
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4inch 6inch Germanium Single Crystals Ge substrates Wafers,customized Ge optical lens Germanium substrates Application: germanium wafer used in production of semiconductor device, ...
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3inch diameter single crystal substrate GGG Wafer Gadolinium Gallium Garnet (GGG, Gd3Ga5O12) is a synthetic crystalline material of the garnet group, with good mechanical, thermal, ...
china
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10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
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VGF 2 Inch 4Inch N Type P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth Gallium arsenide can ...
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4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N ...
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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10X10mm/20x20/5x5mmt <0001> orientation Zinc oxide ZnO single crystal substrate Product Name: Zinc oxide (ZnO) crystal substrate Product Description: Zinc oxide (ZnO) crystal ...
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B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates GaN on GaN In a GaN on GaN vertical ...
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5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate ...
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5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the ...
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device Overview Since the 1990s, it has been used commonly in light ...
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