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MT29F4G08ABADAWP:D TR Program Ic Chip Color TV Ic Memory Flash Chip Rectifier Diode

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Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

Contact name:Doris Guo

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ChongMing Group (HK) Int'l Co., Ltd

MT29F4G08ABADAWP:D TR Program Ic Chip Color TV Ic Memory Flash Chip Rectifier Diode

Country/Region china
City & Province shenzhen
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Product Details

 

4Gb, 8Gb, 16Gb: x8, x16 NAND Flash Memory Features

 

MT29F4G08ABADAH4, MT29F4G08ABADAWP, MT29F4G08ABBDAH4, MT29F4G08ABBDAHC, MT29F4G16ABADAH4, MT29F4G16ABADAWP, MT29F4G16ABBDAH4, MT29F4G16ABBDAHC, MT29F8G08ADADAH4, MT29F8G08ADBDAH4, MT29F8G16ADADAH4, MT29F8G16ADBDAH4, MT29F16G08AJADAWP

 
FEATURES:

• Open NAND Flash Interface (ONFI) 1.0-compliant1

• Single-level cell (SLC) technology

• Organization

– Page size x8: 2112 bytes (2048 + 64 bytes)

– Page size x16: 1056 words (1024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Plane size: 2 planes x 2048 blocks per plane

– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks

 

• Asynchronous I/O performance

– tRC/tWC: 20ns (3.3V), 25ns (1.8V)

• Array performance

– Read page: 25µs 3

– Program page: 200µs (TYP: 1.8V, 3.3V)3

– Erase block: 700µs (TYP)

 

• Command set: ONFI NAND Flash Protocol

• Advanced command set

– Program page cache mode4

– Read page cache mode 4

– One-time programmable (OTP) mode

– Two-plane commands 4

– Interleaved die (LUN) operations

– Read unique ID – Block lock (1.8V only)

– Internal data move

 

• Operation status byte provides software method for detecting

– Operation completion – Pass/fail condition

– Write-protect status

• Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion

• WP# signal: Write protect entire device

 

• First block (block address 00h) is valid when shipped from factory with ECC.

For minimum required ECC, see Error Management.

• Block 0 requires 1-bit ECC if PROGRAM/ERASE cycles are less than 1000

• RESET (FFh) required as first command after power-on

• Alternate method of device initialization (Nand_Init) after power up (contact factory)

 

• Internal data move operations supported within the plane from which data is read

• Quality and reliability – Data retention: 10 years – Endurance: 100,000 PROGRAM/ERASE cycles

• Operating voltage range – VCC: 2.7–3.6V – VCC: 1.7–1.95V

• Operating temperature:

– Commercial: 0°C to +70°C

– Industrial (IT): –40ºC to +85ºC

• Package – 48-pin TSOP type 1, CPL2

– 63-ball VFBGA
   

ABSOLUTE MAXIMUM RATINGS(1)

Supply Voltage (VIN)..........................................–0.3V to 6V
Fault Flag Voltage (VFLG)..............................................+6V
Fault Flag Current (IFLG)............................................. 25mA
Output Voltage (VOUT)...................................................+6V
Output Current (IOUT) ............................... Internally Limited Enable Input (IEN)..................................... –0.3V to VIN +3V
Storage Temperature (TS) ........................ –65°C to +150°C
Supply Voltage (VIN) ................................... +2.7V to +5.5V
Ambient Temperature (TA).......................... –40°C to +85°C
Junction Temperature (TJ)........................ Internally Limited
Thermal Resistance SOP (θJA) ..........................................................160°C/W
MSOP(θJA) ........................................................206°C/W

 
 

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