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PNP Silicon Transistor General Purpose Switching Application BC856BLT3G

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Contact name:Doris Guo

BC856/857/858/859/860

Switching and Amplifier Applications

• Suitable for automatic insertion in thick and thin-film circuits

• Low Noise: BC859, BC860

• Complement to BC846 ... BC850

Typical Characteristics

Symbol	Parameter	Value	Units
V_EBO	Emitter-Base Voltage	-5	V
I_C	Collector Current (DC)	-100	mA
P_C	Collector Power Dissipation	310	mW
T_J	Junction Temperature	150	°C

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