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M29W640GT70NA6E 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory common ic chips

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ChongMing Group (HK) Int'l Co., Ltd

M29W640GT70NA6E 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory common ic chips

Country/Region china
City & Province shenzhen
Categories Memory Cards
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Product Details

M29W640GT70NA6E 64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory common ic chips

Feature

■ Supply Voltage

– VCC = 2.7 to 3.6 V for Program/Erase/Read

– VPP =12 V for Fast Program (optional)

■ Asynchronous Random/Page Read

– Page Width: 4 words

– Page Access: 25 ns

– Random Access: 60 ns, 70 ns, 90 ns

■ Fast Program commands

– 2 word/4 byte Program (without VPP=12 V)

– 4 word/8 byte Program (with VPP=12 V)

– 16 word/32 byte Write Buffer

■ Programming time

– 10 µs per byte/word typical

– Chip Program time: 10 s (4-word Program)

 

 

The M29W640G has an extra block, the Extended Block, of 128 words in x16 mode or of 256 bytes in x8 mode that can be accessed using a dedicated command. The Extended Block can be protected and so is useful for storing security information. However the protection is not reversible, once protected the protection cannot be undone.

 

 

The M29W640GT, M29W640GB, M29W640GH and M29W640GL, are offered in TSOP48 (12x 20mm), TSOP56 (14x 20mm), TFBGA48 (6 x8mm, 0.8mm pitch), and TBGA64 (10x 13mm, 1mm pitch) packages.

 

 

 

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