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PIC16 PIC16F636-I/SL 8 Pins 8-Bit CMOS FLASH Micro controller with nano Watt Technology

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ChongMing Group (HK) Int'l Co., Ltd

PIC16 PIC16F636-I/SL 8 Pins 8-Bit CMOS FLASH Micro controller with nano Watt Technology

Country/Region china
City & Province shenzhen
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Product Details

PIC16 PIC16F636-ISL 8 Pins 8-Bit CMOS FLASH Micro controller with nano Watt Technology

 

Device

Program Memory

Data Memory

I/O

Comparators

Low Frequency Analog Front-End

Flash (words)

SRAM (bytes)

EEPROM (bytes)

PIC12F635

1024

64

128

6

1

N

PIC16F636

2048

128

256

12

2

N

PIC16F639

2048

128

256

12

2

Y

 

High-Performance RISC CPU:

• Only 35 instructions to learn:
- All single-cycle instructions except branches

  • Operating speed:

    • - DC – 20 MHz oscillator/clock input

    • - DC – 200 ns instruction cycle

  • Interrupt capability

  • 8-level deep hardware stack

  • Direct, Indirect and Relative Addressing modes

Special Microcontroller Features:

  • PrecisionInternalOscillator:

    • - Factorycalibratedto±1%,typical

    • - Softwareselectablefrequencyrangeof

      8 MHz to 125 kHz

    • - Softwaretunable

    • - Two-SpeedStart-upmode

    • - Crystalfaildetectforcriticalapplications

    • - Clockmodeswitchingduringoperationfor

      power savings

  • Clockmodeswitchingforlow-poweroperation

  • Power-SavingSleepmode

  • Wideoperatingvoltagerange(2.0V-5.5V)

  • IndustrialandExtendedTemperaturerange

  • Power-onReset(POR)

  • Wake-upReset(WUR)

  • Independent weak pull-up/pull-down resistors

  • ProgrammableLow-VoltageDetect(PLVD)

  • Power-upTimer(PWRT)andOscillatorStart-up

    Timer (OST)

  • Brown-outReset(BOR)withsoftwarecontrol

    option

  • EnhancedLow-CurrentWatchdogTimer(WDT)

    with on-chip oscillator (software selectable nominal 268 seconds with full prescaler) with software enable

  • MultiplexedMasterClearwithpull-up/inputpin

  • Programmablecodeprotection(programand

    data independent)

  • High-EnduranceFlash/EEPROMcell:

    • - 100,000 write Flash endurance

    • - 1,000,000 write EEPROM endurance

    • - Flash/Data EEPROM Retention: > 40 years

Applications

Automotive, Industrial, Consumer Electronics

 

 

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