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50Volt 600Volt 1.0 Amp DO-41 Fast Recovery Rectifier Diode

Guangdong Huixin Electronics Technology Co., Ltd.
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Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China

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Guangdong Huixin Electronics Technology Co., Ltd.

50Volt 600Volt 1.0 Amp DO-41 Fast Recovery Rectifier Diode

Country/Region china
City & Province dongguan guangdong
Categories Switching Power Supply
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Product Details

 

1.0 Amp Fast Recovery Rectifier Diodes 50 to 600 Volts SF16 DO-41

 

 

 

SF11~SF18 DO-41 Datasheet.pdf

 

 

 

Features: 

 

 

  • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
  • Open Junction chip
  • Low reverse leakage
  • High forward surge current capability
  • High temperature soldering guaranteed: 250 C/10 seconds at terminals

 

 

Mechanical Data:

 

 

  • Case : Molded plastic body
  • Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
  • Polarity : Polarity symbol marking on body
  • Mounting Position : Any
  • Weight : 0.0088 ounce, 0.25 grams

 

 

Maximum Ratings And Electrical Characteristics:

 

 

 

Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

 

 

 

ParameterSYMBOLSSF11SF12SF13SF14SF15SF16SF17SF18UNITS
Maximum repetitive peak reverse voltageVRRM50100150200300400500600V
Maximum RMS voltageVRMS3570105140210280350420V
Maximum DC blocking voltageVDC50100150200300400500600V
Maximum average forward rectified current at TL =100 CI(AV)1.0A
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated loadIFSM30.0A
Maximum instantaneous forward voltage at 1.0AVF0.951.251.7V
Maximum DC reverse current T A =25 C at rated DC blocking voltage TA=125 CIR10.0
500
u A
Maxinum reverse recovery time(Note 1)Trr35ns
Typical junction capacitance (Note2)CJ30.0pF
Typical thermal resistanceRqJA65.0C/W
Operating junction and storage temperature rangeTJ,TSTG-55 to +150C

 

 

Note: 1.Reverse recovery time test condition: IF=0.5A IR=1.0A Irr=0.25A
          2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

 

 

 

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