Active Member
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[China]
Address: Tianan Cyber Park, No.1 Huangjin Road, Nancheng District, Dongguan City, Guangdong Province , China
Contact name:Marissa Wang
Guangdong Huixin Electronics Technology Co., Ltd. |
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Fast Recovery Silicon Diode 1A 1000V RS1M DO - 214AC SMD Rectifiers
SMD Silicon Rectifier Diode 1A 1000V RS1M DO - 214AC Ultra Fast Recovery Diode
Ratings at 25 C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
| Parameter | SYMBOLS | RS1A | RS1B |
RS1D
| RS1G | RS1J | RS1K | RS1M | UNITS | |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 50 | 100 |
200
| 400 | 600 | 800 | 1000 | Volts | |
| Maximum RMS Voltage | VRMS | 35 | 70 |
140
| 280 | 420 | 560 | 700 | Volts | |
| Maximum DC Blocking Voltage | VDC | 50 | 100 |
200
| 400 | 600 | 800 | 1000 | Volts | |
| Maximum Average Forward Rectifier Current at TL=100°C | IF(AV) | 1 | Amps | |||||||
| Peak Forward Surge Current ,8.3msSingle Half Sine-Wave Superimposed on rated load | IFSM | 30 | Amps | |||||||
| Maximum Instantaneous Forward Voltage at 1A | VF | 1.3 | Volts | |||||||
| Maximum DC Reverse Current at rated DC blocking voltage | TA=25°C | IR |
5
| μA | ||||||
| TA=125°C |
500
| |||||||||
| Maximum Reverse Recovery Time | Trr |
150
| 250 | 500 | ns | |||||
| Typical Junction Capacitance | CJ |
10
| PF | |||||||
Note: 1.Reverse recovery condition IF =0.5A,IR =1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
