Home Companies Shanghai GaNova Electronic Information Co., Ltd.

High Purity Al2O3>99.995% Sapphire Wafer Mirror Polished EPI Ready

Shanghai GaNova Electronic Information Co., Ltd.

Contact Us

[China] country

Trade Verify

Address: Building 11, Lane 1333, Jiangnan Avenue, Changxing Town, Chongming District, Shanghai

Contact name:Xiwen Bai (Ciel)

Inquir Now

Shanghai GaNova Electronic Information Co., Ltd.

Verified Suppliers
  • Trust
    Seal
  • Verified
    Supplier
  • Credit
    Check
  • Capability
    Assessment

High Purity Al2O3>99.995% Sapphire Wafer Mirror Polished EPI Ready

Country/Region china
City & Province shanghai shanghai
Categories Instrument Parts & Accessories
InquireNow

Product Details

High purity Al2O3>99.995% Sapphire Substrate Wafer Mirror Polished EPI-Ready

JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430μm, crystal orientation C/M0.2, OF length (mm) 16 LED chip,substrate material


Sapphire Substrate Sapphire Substrate makes for superior window material for many IR applications from 3µm to 5µm, for they offer resistant to high temperature, thermal shock, water and sand erosion, small dielectric loss, excellent electrical insulation, with important mechanical and chemical characteristics, and scratching. We have C-Plane R-Plane Sapphire Substrates. C-plane sapphire substrates used for developing III-V and II-VI compounds like GaN for blue LED and laser diodes.

 

Parameters

Specification
UnitTargetTolerance
MaterialHigh purity Al2O3(>99.995%)
Diametermm50.8±0.10
Thicknessμm430±15
Surface OrientationC-Plane(0001)
-Off Angle toward M-axisdegree0.20±0.10
-Off Angle toward A-axisdegree.00±0.10
Flat OrientationA-Plane(11-20)
-Flat Off-set Angledegree0.0±0.2
Flat Lenghtmm16.0±1
R-planeR9
Front surface Roughness(Ra)nm<0.3
Back surface Roughnessμm0.8~1.2μm
Front surface QualityMirror Polished,EPI-Ready
Wafer edgeR-type
Chamfer amplitudeμm80-160
Included angle radian between flat edge and round edgemmR=9
TTVμm≤5
LTV(5x5mm)μm≤1.5
Bowμm0~-5
Warpμm≤10
Laser mark As customer required

 

 

About Us

We specialize in processing a variety of materials into wafers, substrates and customized optical glass parts.components widely used in electronics, optics, opto electronics and many other fields. We also have been working closely with many domestic and oversea universities, research institutions and companies, provide customized products and services for their R&D projects. It's our vision to maintaining a good relationship of cooperation with our all customers by our good reputations.

 

 

FAQ

Q: Are you trading company or manufacturer ?
We are factory.
Q: How long is your delivery time?
Generally it is 3-5 days if the goods are in stock.
or it is 7-10 days if the goods are not in stock, it is according to quantity.
Q: Do you provide samples ? is it free or extra ?
Yes, we could offer the sample for free charge but do not pay the cost of freight.
Q: What is your terms of payment ?
Payment <=5000USD, 100% in advance.
Paymen >=5000USD, 80% T/T in advance , balance before shippment.

 

Hot Products

5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm ...
2-inch Free-standing U-GaN/SI-GaN Substrates 350 ± 25 μm 50.8 ± 1 mm 2inch C-face Un-doped n-type ...
2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power ...
Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a ...
4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview ...
0.015~0.028ohm.Cm SiC Seed Crystal 4" P Grade N-Type Orientation 4.0°±0.2° SiC Seed Crystal 4" ...