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New Original Bss123 Sa Sot23 integrated circuit ic chip
Products Description:
BSS123 N-Channel MOSFET 100V 170mA/0.17A SOT-23/SC-59 marking SA fast switching/logic level compatible
Maximum Source-Drain Voltage Vds Drain-Source Voltage| 100V ---|--- Maximum Gate-Source Voltage Vgs(±) Gate-Source Voltage| 100V Maximum Drain Current Id Drain Current| 170mA/0.17A Source-Drain On-resistanceΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance| 3.4Ω/Ohm @1.7A,10V Turn-on voltage Vgs(th) Gate-Source Threshold Voltage| 0.8-1.2V Pd Power Dissipation| 360mW/0.36W Description & Applications| N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS100: 0.22A, 100V. RDS(ON)= 6W @ VGS = 10V. BSS123: 0.17A, 100V. RDS(ON)= 6W @ VGS = 10V High density cell design for extremely low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. Description & Application | N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS100: 0.22A, 100V. RDS(ON)=6W@VGS=10V. BSS123: 0.17A, 100V. RDS(ON)=6W@ VGS= 10V High-density battery is designed with extremely low RDS(ON) voltage to control small signal switch.
Technological Parameters:
| Input Capacitance (Ciss) | 73pF @25V(Vds) |
| Drain-source resistance | 1.2 Ω |
| Dissipated power | 360 mW |
| threshold voltage | 1.7 V |
| Drain-Source Voltage (Vds) | 100 V |
| Installation method | Surface Mount |
| pin number | 3 |
| package | SOT-23-3 |
| Operating temperature | -55℃ ~ 150℃ |
| Packing | Tape & Reel (TR) |
