Results fordsp sic epitaxial substratesfrom 543 Products.
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2inch 3inch 4inch 6inch SiC Ingot and substrate 4H-N/Semi Type SiC Ingots Industrial Dummy2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia ...
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4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, 4h-semi 4h-N customized square shape sic wafers Application ...
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Low Optical Losses 7.09g/Cm3 Liquid Epitaxy Film SGGG Gd3Ga5O12 Substituted Gadolinium Gallium Garnet (SGGG, Gd3Ga5O12) is used as substrates for liquid epitaxy.GGG substrtae is ...
china
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview We provide high-quality GaN substrates which are ...
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Gadolinium gallium garnet (GGG) substrate, an excellent substrate material for Bi Fe garnet epitaxial films Gadolinium gallium garnet (GGG) substrate, one of the earlier developed ...
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Special Orientation A-axis R-axis M-axis 2inch 3inch 4inch 6inch sapphire substrates wafers for GaN epitaxial growth； Sapphire is one of the hardest materials, and possesses very ...
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B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates GaN on GaN In a GaN on GaN vertical ...
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Fiber Isolator Used YIG Film GSGG Wafer Gadolinium gallium garnet(GGG) is a special substrate magneto optical flims.substituted iron garnet epitaxial films, which is good material ...
china
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5 X 10 mm2 M Face Free-Standing GaN Substrates 350 ±25 µm TTV ≤ 10 µm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power ...
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Gadolinium gallium garnet (GGG) substrate, an excellent substrate material for Bi Fe garnet epitaxial films Gadolinium gallium garnet (GGG) substrate, one of the earlier developed ...
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VGF 2 Inch 4Inch N Type P Type GaAs Wafer Semiconductor Substrate For Epitaxial Growth VGF 2inch 4inch 6inch n-type prime grade GaAs wafer for epitaxial growth Gallium arsenide can ...
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8inch dia200mm 4H-N Production grade dummy grade SiC wafers Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, Application areas 1 ...
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Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the ...
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4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, 4h-semi 4h-N customized square shape sic wafers ...
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be ...
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4’’ 4H-Semi High-Purity SIC Wafers Prime Grade Semiconductor EPI Substrates Description of HP 4H-semi SIC: 1. The high purity semi-insulating 4H-SiC (silicon carbide) wafers are ...
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Description: Epiaxial wafers refer to products formed by growing a new single crystal layer on a single crystal substrate. Epiaxial wafers determine about 70% of the performance of ...
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4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N ...
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5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
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350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power ...
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