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H9HCNNN4KMMLHR 4Gb DRAM Memory Chip , LPDDR4 BGA200 Computer Ram Chip Storage

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H9HCNNN4KMMLHR 4Gb DRAM Memory Chip , LPDDR4 BGA200 Computer Ram Chip Storage

Country/Region	china
Categories	RAMs

Product Details

DRAM Memory Chip DRAM Memory Chip H9HCNNN4KMMLHR 4Gb LPDDR4 BGA200 Memory Chip Storage

Features:

VDD1 = 1.8V (1.7V to 1.95V) · VDD2 and VDDCA = 1.1V (1.06V to 1.17V) · VDDQ = 0.6V (0.57V to 0.65V) · VSSQ terminated DQ signals (DQ, DQS_t, DQS_c, DMI) · Single data rate architecture for command and address; - all control and address latched at rising edge of the clock · Double data rate architecture for data Bus; - two data accesses per clock cycle · Differential clock inputs (CK_t, CK_c) · Bi-directional differential data strobe (DQS_t, DQS_c) - Source synchronous data transaction aligned to bi-directional differential data strobe (DQS_t, DQS_c) · DMI pin support for write data masking and DBIdc functionality · Programmable RL (Read Latency) and WL (Write Latency) · Burst length: 16 (default), 32 and On-the-fly - On the fly mode is enabled by MRS · Auto refresh and self refresh supported · All bank auto refresh and directed per bank auto refresh supported · Auto TCSR (Temperature Compensated Self Refresh) · PASR (Partial Array Self Refresh) by Bank Mask and Segment Mask · Background ZQ Calibration

**Product Specifications**
Part No.	Den.	Org.	Vol	Speed	Power	PKG	Product Status
H9HCNNN4KMMLHR	4Gb	x16	1.8V-1.1V-0.6V	L / M	Low Power	200	Mass production
H9HCNNN4KUMLHR	4Gb	x16	1.8V-1.1V-1.1V	L / M	Low Power	200	Mass production
H9HCNNN8KUMLHR	8Gb	x16	1.8V-1.1V-1.1V	L / M	Low Power	200	Mass production
H9HCNNNBKMMLHR	16Gb	x16	1.8V-1.1V-0.6V	M / E	Low Power	200	Mass production
H9HCNNNBKUMLHR	16Gb	x16	1.8V-1.1V-1.1V	M / E	Low Power	200	Mass production
H9HCNNNBPUMLHR	16Gb	x16	1.8V-1.1V-1.1V	L / M	Low Power	200	Mass production
H9HCNNNCPMMLHR	32Gb	x16	1.8V-1.1V-0.6V	M / E	Low Power	200	Mass production
H9HCNNNCPUMLHR	32Gb	x16	1.8V-1.1V-1.1V	M / E	Low Power	200	Mass production