Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Stock Offer (Hot Sell)
| Part no. | Quantity | Brand | D/C | Package |
| DS1245Y-100 | 1002 | DALLAS | 15+ | TO-92 |
| DS1990A-F5 | 1002 | MAXIM | 16+ | CAN |
| ICL7135CPIZ | 1002 | INTERSIL | 16+ | DIP |
| IRFP150NPBF | 5000 | IR | 14+ | TO-247 |
| IRFP260NPBF | 5000 | IR | 14+ | TO-247 |
| K847P | 1002 | VISHAY | 14+ | DIP16 |
| LM301AN | 1002 | NS | 16+ | DIP8 |
| LM35DT | 1002 | NS | 16+ | TO-220 |
| MC34074AP | 1002 | ON | 13+ | DIP14 |
| TC962CPA | 1002 | MICROCHIP | 15+ | DIP8 |
| VB125ASP | 1002 | STM | 16+ | SOP-10 |
| LT1084CT-12 | 1005 | LT | 16+ | TO220 |
| XC2C64A-7VQG44C | 1005 | XILINX | 14+ | QFP44 |
| 30344 | 560 | BOSCH | 14+ | QFP |
| AT93C66A-10SQ-2.7 | 1008 | ATMEL | 14+ | SOP8 |
| NCP1200AP40 | 1008 | ON | 16+ | DIP8 |
| PCA82C250T/N4,118 | 3000 | NXP | 16+ | SOP8 |
| ADM5120PX-AB-T-2 | 1009 | 13+ | QFP208 | |
| TDA8950J | 1011 | NXP | 15+ | ZIP23 |
| HT8950 | 1012 | HOLTEK | 16+ | DIP |
| TDA7384 | 1012 | ST | 16+ | ZIP |
| CS5550-ISZ | 1022 | CIRRUS | 14+ | SSOP24 |
| LF412CN | 1022 | NS | 14+ | DIP8 |
| IR21141SSPBF | 1031 | IR | 14+ | SSOP24 |
| XCF04SVOG20C | 1034 | XILINX | 16+ | SOP |
| MC34084P | 1050 | ON | 16+ | DIP-14 |
| DAC1220E | 1077 | TI | 13+ | SSOP16 |
| AT91SAM7X256-AU | 1088 | ATMEL | 15+ | QFP |
| 74LVX4245MTCX | 1100 | FSC | 16+ | TSSOP |
| ADM2582EBRWZ | 1100 | AD | 16+ | SOP-20 |
STGP7NC60HD
STGF7NC60HD - STGB7NC60HD
N-CHANNEL 14A - 600V - TO-220/TO-220FP/D²PAK
Very Fast PowerMESH™ IGBT
■ LOWER ON-VOLTAGE DROP (Vcesat)
■ OFF LOSSES INCLUDE TAIL CURRENT
■ LOSSES INCLUDE DIODE RECOVERY ENERGY
■ LOWER CRES/CIES RATIO
■ HIGH FREQUENCY OPERATION UP TO 70 KHz
■ VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE
■ NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION
DESCRIPTION
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
APPLICATIONS
■ HIGH FREQUENCY INVERTERS
■ SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES
■ MOTOR DRIVERS
Absolute Maximum ratings
| Symbol | Parameter | Value | Unit | |
STGP7NC60HD STGB7NC60HD | STGF7NC60HD | |||
| VCES | Collector-Emitter Voltage (VGS = 0) | 600 | V | |
| VECR | Emitter-Collector Voltage | 20 | V | |
| VGE | Gate-Emitter Voltage | ±20 | V | |
| IC | Collector Current (continuous) at TC = 25°C (#) | 25 | 10 | A |
| IC | Collector Current (continuous) at TC = 100°C (#) | 14 | 6 | A |
| ICM (1) | Collector Current (pulsed) | 50 | A | |
| IF | Diode RMS Forward Current at TC = 25°C | 20 | A | |
| PTOT | Total Dissipation at TC = 25°C | 80 | 25 | W |
| Derating Factor | 0.64 | 0.20 | W/°C | |
| VISO | Insulation Withstand Voltage A.C. (t = 1 sec; Tc = 25°C) | - | 2500 | V |
| Tstg | Storage Temperature | – 55 to 150 | °C | |
| Tj | Operating Junction Temperature | |||
(1) Pulse width limited by max. junction temperature.
Figure 1: Package
Figure 2: Internal Schematic Diagram
