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SPW47N60C3 Power Mosfet Transistor Cool MOS™ Power Transistor

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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

SPW47N60C3 Cool MOS^TM Power Transistor

Feature

• New revolutionary high voltage technology

• Worldwide best R_DS(on) in TO 247

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

Maximum Ratings

Parameter	Symbol	Value	Unit
Continuous drain current T_C = 25 °C T_C = 100 °C	I_D	47 30	A
Pulsed drain current, t_p limited by T_jmax	I_{D puls}	141	A
Avalanche energy, single pulse I_D = 10 A, V_DD = 50 V	E_AS	1800	mJ
Avalanche energy, repetitive t_AR limited by T_jmax¹) I_D = 20 A, V_DD = 50 V	E_AR	1	mJ
Avalanche current, repetitive t_AR limited by T_jmax	I_AR	20	A
Gate source voltage static	V_GS	±20	V
Gate source voltage AC (f >1Hz)	V_GS	±30	V
Power dissipation, T_C = 25°C	P_tot	415	W
Operating and storage temperature	Tj , Tstg	-55... +150	°C
Drain Source voltage slope V_DS = 480 V, I_D = 47 A, T_j = 125 °C	dv/dt	50	V/ns

1 Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.

P-TO-247-3-1

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