Active Member
|
[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
|
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4 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE NPN Epitaxial
Silicon Transistor
PACKAGE DIMENSIONS
(in millimeter)
DESCRIPTION
The 2SK2414 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 70 mΩ MAX. (@ VGS = 10 V, ID = 5.0 A)
RDS(on)2 = 95 mΩ MAX. (@ VGS = 4 V, ID = 5.0 A)
• Low Ciss Ciss = 840 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
QUALITY GRADE
Standard Please refer to "Quality grade on NEC Semiconductor
Devices" (Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
| Drain to Source Voltage | VDSS | 60 | V |
| Gate to Source Voltage | VGSS | ±20 | V |
| Drain Current (DC) | ID(DC) | ±10 | A |
| Drain Current (pulse)* | ID(pulse) | ±40 | A |
| Total Power Dissipation (Tc = 25 ˚C) | PT1 | 20 | W |
| Total Power Dissipation (TA = 25 ˚C) | PT2 | 1.0 | W |
| Channel Temperature | Tch | 150 | °C |
| Storage Temperature | Tstg | –55 to +150 | °C |
| Single Avalanche Current** | IAS | 10 | A |
| Single Avalanche Energy** | EAS | 10 | mJ |
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
TYPICAL CHARACTERISTICS (TA = 25 °C)
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