Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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| ICL3222CB | 4100 | INTERSIL | 12+ | SOP18 |
| SGA-5486 | 4100 | SIRENZA | 16+ | SMT86 |
| TEA1098ATV | 4100 | NXP | 12+ | SSOP |
| NCP1271ADR | 4110 | ON | 16+ | SOP7 |
| FKV550T | 4111 | SANKEN | 16+ | TO220F |
| EPM570F256C5N | 4117 | ALTERA | 16+ | BGA256 |
| MC33063AP1 | 4117 | ON | 16+ | DIP8 |
| DS32ELX0421SQE | 4120 | NS | 16+ | LLP48 |
| P2503NPG | 4120 | NIKOS | 14+ | DIP8 |
| TPS70751PWPR | 4120 | TI | 16+ | TSSOP |
| HCPL4504 | 4121 | AVAGO | 16+ | DIP |
| OP177GP | 4122 | AD | 15+ | DIP-8 |
| 24LC512-I/SM | 4130 | MICROCHIP | 16+ | SOP-8 |
| OZ8602GN | 4141 | MICRO | 15+ | SOP-16 |
| CNY70 | 4177 | VISHAY | 12+ | DIP-4 |
| DS26LS32ACMX | 4177 | NS | 16+ | SOP16 |
| AD517JH | 4200 | AD | 12+ | TO-78 |
| ATMEGA169PV-8AU | 4200 | ATMEL | 16+ | QFP-64 |
| CDRH2D18/HP-2R2NC | 4200 | SUMIDA | 16+ | SMD |
| IPD06N03LAG | 4200 | 16+ | TO-252 | |
| OP07CP | 4200 | TI | 16+ | DIP8 |
| PIC18F2520-I/SO | 4200 | MICROCHIP | 16+ | SOP-28 |
| SG6841DZ | 4200 | SG | 14+ | DIP-8 |
| SN75HVD3082EP | 4200 | TI | 16+ | DIP |
| BSP450 | 4210 | 16+ | SOT223 | |
| HD74LS14P-E-Q | 4210 | RENESAS | 15+ | DIP14 |
| TLZ5V1C | 4210 | VISHAY | 16+ | LL-34 |
| PCF8593T | 4211 | NXP | 15+ | SOP8 |
| BDW94C | 4250 | ST | 12+ | TO-220 |
| LQM21FN1R0N00D | 4250 | MURATA | 16+ | SMD |
| AT93C66-10SU-2.7 | 4252 | ATMEL | 12+ | SOP-8 |
| 2N3906 | 4287 | ON | 16+ | TO-92 |
| DS18B20 | 4444 | MAXIM | 16+ | TO-92 |
| 95SQ015 | 4456 | IR | 16+ | DO-204AD |
| PDTC143ET | 4477 | NXP | 16+ | SOT-23 |
| BZX284-C12 | 4480 | PHI | 16+ | SOD-323 |
| 1SMB5920BT3G | 4500 | ON | 14+ | DO-214AA |
| 1SMB5922BT3G | 4500 | ON | 16+ | DO-214AA |
| 1SMB5929BT3G | 4500 | ON | 16+ | DO-214AA |
| 82C250T | 4500 | NXP | 15+ | SOP |
| ADM202EAN | 4500 | AD | 16+ | DIP |
Features
►Advanced Process Technology
►Ultra Low On-Resistance
►175°C Operating Temperature
►Fast Switching
►Repetitive Avalanche Allowed up to Tjmax
►Lead-Free
Description
Specifically designed for Automotive applications, ID = 75A this HEXFETÆ Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
