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IR21531S Electronic IC Chips SELF-OSCILLATING HALF-BRIDGE DRIVER

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Anterwell Technology Ltd.

IR21531S Electronic IC Chips SELF-OSCILLATING HALF-BRIDGE DRIVER

Country/Region china
City & Province shenzhen guangdong
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Product Details

 

IR21531D(S) & (PbF)

SELF-OSCILLATING HALF-BRIDGE DRIVER

 

Features

• Integrated 600V half-bridge gate driver

• 15.6V zener clamp on Vcc

• True micropower start up

• Tighter initial deadtime control

• Low temperature coefficient deadtime

• Shutdown feature (1/6th Vcc) on CT pin

• Increased undervoltage lockout Hysteresis (1V)

• Lower power level-shifting circuit

• Constant LO, HO pulse widths at startup

• Lower di/dt gate driver for better noise immunity

• Low side output in phase with RT

• Internal 50nsec (typ.) bootstrap diode (IR21531D)

• Excellent latch immunity on all inputs and outputs

• ESD protection on all leads

• Also available LEAD_FREE

 

Description

The IR21531(D)(S) are an improved version of the popular IR2155 and IR2151 gate driver ICs, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR21531 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal.

 

In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.

 

 

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

 

SymbolDefinitionMin.Max.Units
VBHigh side floating supply voltage-0.3625V
VSHigh side floating supply offset voltageVB - 25VB + 0.3V
VHOHigh side floating output voltageVS - 0.3VB + 0.3V
VLOLow side output voltage-0.3VCC + 0.3V
VRTRT pin voltage-0.3VCC + 0.3V
VCTCT pin voltage-0.3VCC + 0.3V
ICCSupply current (note 1)--25mA
IRTRT pin current-55mA
dVs/dtAllowable offset voltage slew rate-5050V/ns
PDMaximum power dissipation @ TA ≤ +25°C(8 Lead DIP)--1.0W
(8 Lead SOIC)--0.625W
RthJAThermal resistance, junction to ambient(8 Lead DIP)--125°C/W
(8 Lead SOIC)--200°C/W
TJJunction temperature-55150°C
TSStorage temperature-55150°C
TLLead temperature (soldering, 10 seconds)--300°C

Note 1: This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source greater than the VCLAMP specified in the Electrical Characteristics section.

 

 

 

 

Stock Offer (Hot Sell)

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