TQP7M9105 Integrated Circuit Chip 1W High Linearity Amplifier integrated circuit ic

TQP7M9105 1W High Linearity Amplifier

Applications

Repeaters

BTS Transceivers  

BTS High Power Amplifiers

CDMA / WCDMA / LTE

 ISM Equipment

General Purpose Wireless

Product Features

50-1500 MHz

 +30 dBm P1dB at 940MHz

 +47 dBm Output IP3 at 940MHz

19.5 dB Gain at 940 MHz

+5V Single Supply, 220 mA Current

Internal RF overdrive protection

Internal DC overvoltage protection

On chip ESD protection

SOT-89 Package

General Description

The TQP7M9105 is a high linearity, high gain 1W driver amplifier in industry standard, RoHS compliant, SOT-89 surface mount package. This InGaP/GaAs HBT delivers high performance across 0.05 to 1.5 GHz while achieving +47 dBm OIP3 and +30 dBm P1dB at 940 MHz while only consuming 220 mA quiescent current. All devices are 100% RF and DC tested.

The TQP7M9105 incorporates on-chip features that differentiate it from other products in the market. The amplifier has a dynamic active bias circuit that enable stable operation over bias and temperature variations and can provide a high linearity at back-off operation.

The TQP7M9105 is targeted for use as a driver amplifier in wireless infrastructure where high linearity, medium power, and high efficiency are required. The device an excellent candidate for transceiver line cards and high power amplifiers in current and next generation multi-carrier 3G / 4G base stations.

Absolute Maximum Ratings  

Operation of this device outside the parameter ranges given above may cause permanent damage.

Recommended Operating Conditions

Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.

Specifications

Test conditions unless otherwise noted: +25°C, +5V Vcc, 50 Ω system, tuned application circuit

Notes: 1. ACLR Test set-up: 3GPP WCDMA, TM1+64 DPCH, +5 MHz offset, PAR = 9.7 dB at 0.01% Prob.

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