NDS9952A Power Mosfet Transistor Dual N & P-Channel Field Effect Transistor

NDS9952A

Dual N & P-Channel Enhancement Mode Field Effect Transistor

General Description

These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

• N-Channel 3.7A, 30V, R_DS(ON)=0.08W @ V_GS=10V.
• P-Channel -2.9A, -30V, R_DS(ON)=0.13W @ V_GS=-10V.
• High density cell design or extremely low R_DS(ON).
• High power and current handling capability in a widely used surface mount package.
• Dual (N & P-Channel) MOSFET in surface mount package.

Absolute Maximum Ratings T_A= 25°C unless otherwise noted

Notes: 1. R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R_θJC is guaranteed by design while R_θCA is determined by the user's board design.

Typical R_θJA for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:

a. 78℃/W when mounted on a 0.5 in² pad of 2oz cpper.

b. 125℃/W when mounted on a 0.02 in² pad of 2oz cpper.

c. 135℃/W when mounted on a 0.003 in² pad of 2oz cpper.

Scale 1 : 1 on letter size paper

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