Active Member
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[China]
Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
Contact name:Zhu
Shenzhen Koben Electronics Co., Ltd. |
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IRF540NS N-Channel 100V 33A 130W D2PAK MOSFET with Fast Switching
| Features |
Advanced Process Technology |
Ultra Low On-Resistance |
Dynamic dv/dt Rating |
175°C Operating Temperature |
Fast Switching |
Fully Avalanche Rated |
Lead-Free |
| Description |
Advanced HEXFET® Power MOSFETs from |
International Rectifier utilize advanced processing |
techniques to achieve extremely low on-resistance per |
silicon area. This benefit, combined with the fast |
switching speed and ruggedized device design that |
HEXFET power MOSFETs are well known for, provides |
the designer with an extremely efficient and reliable |
device for use in a wide variety of applications. |
The D2Pak is a surface mount power package capable of |
accommodating die sizes up to HEX-4. It provides the |
highest power capability and the lowest possible on- |
resistance in any existing surface mount package. The |
D2Pak is suitable for high current applications because of |
its low internal connection resistance and can dissipate up |
to 2.0W in a typical surface mount application. |
The through-hole version (IRF540NL) is available for low- |
profile applications. |
Product Attributes
| FET Type | N-Channel |
| Technology | MOSFET |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 33A |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 44 mOhm @ 16A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 71nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
