IRFB5615PBF IRFB5615 N-Channel MOSFET 150V 35A (Tc) 144W (Tc)
Through Hole TO-220AB
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 39mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id | 5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1750pF @ 50V |
FET Feature | - |
Power Dissipation (Max) | 144W (Tc) |
Operating Temperature | -55°C ~ 175°C |
List Of Other Electronic Components In Stock |
SII9025CTU-S2 | SILICON/P | | RJ23114B0PB | SHARP |
LTC1435ACS | LT | | NHI350AM2 | INTEL |
7445601 | WURTHELEC | | AUO-K1901 | AUO |
PIC12C509A-04/SM | MICROCHIP | | TSA5518M | TOSHIBA |
LM3243TMX | TI | | FQD5N50C | FAIRCHILD |
ICS9VRS4420DKILFT | ICS | | TMS570SF762BRFPQQ | TI |
FD2H001BAR-LF | FEELING | | AD9963BCPZ | ADI |
AMC6821SQDBQRQ1 | TI | | WPCE773LAODG | WINBOND |
AD1580BRTZ-REEL7 | ADI | | R1EX24512ASASOA | RENESAS |
74LCX126MTCX | FSC | | NJM2881F25 | JRC |
TC75W57FU | TOSHIBA | | LP2981AIM5X-3.0 | NS |
MX7548KN+ | MAXIM | | UPC1093TA-E1 | NEC |
G574 | GMT | | S5L2101T | SAMSUNG |
EP4CE22F17I7N | ALTERA | | MT6268A/B | MTK |
K4M28323PH-HG1L | SAMSUNG | | 2SB1204 | SANYO |
SI7135DP-T1-GE3 | VISHAY | | ML6756B-31GAZ03A-114 | OKI |
NE555P | TI | | BD6964FVM-TR | ROHM |
KFG5616U1M-DIBO | SAMSUNG | | CBT6832DG-T | PHI |
HVDA553QDRQ1 | TI | | AAT3151IWP-T1 | ANALOGIC |
NTP-3100 | NEOFIDELI | | XCS30XL-4TQ144C | XILINX |