Active Member
|
[China]
Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031
Contact name:Zhu
Shenzhen Koben Electronics Co., Ltd. |
|
|
IRFPC60PBF MOSFET TRANSISTOR N-Channel 600V 16A (Tc) 280W (Tc)
Through Hole TO-247-3
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer
with the best combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness. The TO-247
package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247
is similar but superior to the earlier TO-218 package because of
its isolated mounting hole. It also provides greater creepage
distance between pins to meet the requirements of most safety
specifications.
| Manufacturer | Vishay Siliconix | |
|---|---|---|
| Series | - | |
Packaging  | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 210nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 280W (Tc) | |
| Rds On (Max) @ Id, Vgs | 400 mOhm @ 9.6A, 10V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-3 | |
| Package / Case | TO-247-3 |
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